Memory system, memory device and apparatus including writing driver circuit for a variable resistive memory
First Claim
1. A hand held system, comprising:
- a memory device including an array of nonvolatile memory cells and a writing driver circuit for driving at least one of the nonvolatile memory cell; and
a controller configured to be coupled to the memory device to control the memory device,wherein the writing driver circuit includes;
a pulse selection circuit configured to output a selected one of a reset pulse and a set pulse in response to a logic level of data and the data;
a current control circuit configured to receive a bias voltage, to output a control signal at a second level during an enable duration of the reset pulse when the data is at a first level, and to output the control signal at a first level during an enable duration of the set pulse when the data is at a second level; and
a current drive circuit configured to output writing current to the at least one of the nonvolatile memory cell in response to the control signal during the enable duration of the reset pulse or of the set pulse.
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Accused Products
Abstract
An apparatus, a nonvolatile memory device and a nonvolatile memory system include an array of nonvolatile variable resistive memory (VRM) cells and a writing driver circuit having a pulse selection circuit, a current control circuit, and a current drive circuit. The current control circuit receives a bias voltage, outputs a control signal at a second level during an enable duration of the reset pulse when the data is at a first level, and outputs a control signal at a first level during an enable duration of the set pulse when the data is at a second level. The current drive circuit outputs writing current to the phase-change memory array during the enable duration of the reset pulse or the set pulse. The writing driver circuit can select the reset pulse or the set pulse according to the logic level of the data, and control the level of current applied to the phase-change memory array according to the reset pulse or the set pulse.
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Citations
20 Claims
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1. A hand held system, comprising:
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a memory device including an array of nonvolatile memory cells and a writing driver circuit for driving at least one of the nonvolatile memory cell; and a controller configured to be coupled to the memory device to control the memory device, wherein the writing driver circuit includes; a pulse selection circuit configured to output a selected one of a reset pulse and a set pulse in response to a logic level of data and the data; a current control circuit configured to receive a bias voltage, to output a control signal at a second level during an enable duration of the reset pulse when the data is at a first level, and to output the control signal at a first level during an enable duration of the set pulse when the data is at a second level; and a current drive circuit configured to output writing current to the at least one of the nonvolatile memory cell in response to the control signal during the enable duration of the reset pulse or of the set pulse. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A high capacity storage system, comprising:
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a memory device including an array of nonvolatile memory cells and a writing driver circuit for driving at least one of the nonvolatile memory cells; and a controller configured to be coupled to the memory device to control the memory device, wherein the motion driver circuit includes; a pulse selection circuit configured to output a selected one of a reset pulse and a set pulse in response to a logic level of data and the data; a current control circuit configured to receive a bias voltage, to output a control signal at a second level during an enable duration of the reset pulse when the data is at first level, and to output the control signal at a first level during an enable duration of the set pulse when the data is at a second level; and a current drive circuit configured to output writing current to the at least one of the nonvolatile memory cells in response to the control signal during the enable duration of the reset pulse or of the set pulse. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A multi-chip package, comprising:
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a first integrated circuit die including a logic circuit; and at least one second integrated circuit die including an array of nonvolatile memory cells and a writing driver circuit for driving at least one of the nonvolatile memory cells, the writing driving circuit including; a pulse selection circuit configured to output a selected one of a reset pulse and a set pulse in response to a logic level of data and the data; a current control circuit configured to receive a bias voltage, to output a control signal at a second level during an enable duration of the reset pulse when the data is at a first level, and to output the control signal at a first level during an enable duration of the set pulse when the data is at a second level; and a current drive circuit configured to output writing current to the nonvolatile memory cell in response to the control signal during the enable duration of the reset pulse or of the set pulse. - View Dependent Claims (17, 18, 19, 20)
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Specification