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Method for fabricating a semiconductor component based on GaN

  • US 7,691,656 B2
  • Filed: 04/17/2003
  • Issued: 04/06/2010
  • Est. Priority Date: 10/17/2000
  • Status: Expired due to Fees
First Claim
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1. A method for an epitaxial fabrication of a radiation-emitting semiconductor component, the method comprising the steps of:

  • providing a composite substrate having a substrate body and an interlayer applied to the substrate body using a bonding process, the substrate body having a given coefficient of thermal expansion, the interlayer being formed from AlGaN;

    applying GaN-based layers to the interlayer of the composite substrate, the GaN-based layers collectively having a bottom facing the composite substrate and a top facing away form the composite substrate;

    applying a carrier to the GaN-based layers;

    forming a reflector layer on the top of the GaN-based layers so that the GaN-based layers are arranged between the reflector layer and the composite substrate, and the reflector layer is disposed between the GaN-based layers and the carrier; and

    arranging the reflector layer to reflect radiation generated in the GaN-based layers;

    wherein the reflector layer is an electrical contact surface; and

    wherein the given coefficient of thermal expansion of the substrate body is equal to or greater than a coefficient of thermal expansion of the GaN-based layers.

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