Method for improved growth of semipolar (Al,In,Ga,B)N
First Claim
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1. A method for improved growth of a semipolar nitride semiconductor film comprising:
- (a) depositing a semipolar nitride semiconductor film on a miscut substrate, wherein a growth surface of the semipolar nitride semiconductor film is more than 10 microns wide and substantially parallel to the miscut substrate'"'"'s surface.
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Abstract
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
293 Citations
26 Claims
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1. A method for improved growth of a semipolar nitride semiconductor film comprising:
(a) depositing a semipolar nitride semiconductor film on a miscut substrate, wherein a growth surface of the semipolar nitride semiconductor film is more than 10 microns wide and substantially parallel to the miscut substrate'"'"'s surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 26)
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25. A method for improved growth of a lower symmetry layer on a higher symmetry substrate comprising:
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(a) miscutting a higher symmetry substrate to match a symmetry of a lower symmetry layer; and (b) depositing the lower symmetry layer heteroepitaxially on the miscut higher symmetry substrate.
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Specification