Radiation-emitting semiconductor element and method for producing the same
First Claim
1. Method for producing a radiation-emitting semiconductor component whose semiconductor body includes a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surface, with at least a portion of the radiation being emitted through the first principal surface, the method comprising:
- producing a reflecting contact layer for electrically contacting said semiconductor body on the second principal surface of the semiconductor body on the semiconductor layer stack,wherein producing the contact layer comprises applying a first layer to the semiconductor layer stack and applying a second layer to the first layer,wherein the first layer is transparent to the radiation emitted by the stack of different III-V nitride semiconductor layers and the second layer reflects the radiation emitted by the stack of different III-V nitride semiconductor layers,wherein the different III-V nitride semiconductor layers are epitaxially grown on a substrate,wherein the transparent first layer is not epitaxially grown on the substrate,wherein the substrate is a composite substrate that has a substrate body and an interlayer, with a coefficient of thermal expansion of the substrate body being similar to or greater than a coefficient of thermal expansion of the III-V nitride layers, with the III-V nitride layers being deposited on the interlayer, andwherein the substrate is removed.
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Abstract
This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).
The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.
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Citations
29 Claims
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1. Method for producing a radiation-emitting semiconductor component whose semiconductor body includes a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surface, with at least a portion of the radiation being emitted through the first principal surface, the method comprising:
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producing a reflecting contact layer for electrically contacting said semiconductor body on the second principal surface of the semiconductor body on the semiconductor layer stack, wherein producing the contact layer comprises applying a first layer to the semiconductor layer stack and applying a second layer to the first layer, wherein the first layer is transparent to the radiation emitted by the stack of different III-V nitride semiconductor layers and the second layer reflects the radiation emitted by the stack of different III-V nitride semiconductor layers, wherein the different III-V nitride semiconductor layers are epitaxially grown on a substrate, wherein the transparent first layer is not epitaxially grown on the substrate, wherein the substrate is a composite substrate that has a substrate body and an interlayer, with a coefficient of thermal expansion of the substrate body being similar to or greater than a coefficient of thermal expansion of the III-V nitride layers, with the III-V nitride layers being deposited on the interlayer, and wherein the substrate is removed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. Method for producing a radiation-emitting semiconductor component whose semiconductor body includes a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surface, with at least a portion of the radiation being emitted through the first principal surface, the method comprising:
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applying the III-V nitride layers to a composite substrate that has a substrate body and an interlayer, with the coefficient of thermal expansion of the substrate body being similar to or greater than the coefficient of thermal expansion of the III-V nitride layers, with the III-V nitride layers being deposited on the interlayer, wherein the III-V nitride layers are deposited on an Si(111) surface or on an SiC surface of the interlayer that is monocrystalline at least in subregions; and producing a reflector on the second principal surface of the semiconductor body on the semiconductor layer stack, wherein producing the reflector comprises applying a first layer to the semiconductor layer stack and applying a reflecting second layer to the first layer, wherein the first layer is transparent to the radiation emitted by the stack of different III-V nitride semiconductor layers.
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25. Method for producing a radiation-emitting semiconductor component whose semiconductor body includes a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surface, with at least a portion of the radiation being emitted through the first principal surface, the method comprising:
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applying the III-V nitride layers to a composite substrate that has a substrate body and an interlayer, with the coefficient of thermal expansion of the substrate body being similar to or greater than the coefficient of thermal expansion of the III-V nitride layers, with the III-V nitride layers being deposited on the interlayer, wherein the interlayer is applied to the substrate body by a wafer-bonding method; and producing a reflector on the second principal surface of the semiconductor body on the semiconductor layer stack, wherein producing the reflector comprises applying a first layer to the semiconductor layer stack and applying a reflecting second layer to the first layer, wherein the first layer is transparent to the radiation emitted by the stack of different III-V nitride semiconductor layers.
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26. Method for producing a radiation-emitting semiconductor component whose semiconductor body includes a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surface, with at least a portion of the radiation being emitted through the first principal surface, the method comprising:
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applying the III-V nitride layers to a composite substrate that has a substrate body and an interlayer, with the coefficient of thermal expansion of the substrate body being similar to or greater than the coefficient of thermal expansion of the III-V nitride layers, with the III-V nitride layers being deposited on the interlayer, wherein the III-V nitride layers are structured into individual semiconductor layer stacks after being applied to the composite substrate; and producing a reflector on the second principal surface of the semiconductor body on the semiconductor layer stack, wherein producing the reflector comprises applying a first layer to the semiconductor layer stack and applying a reflecting second layer to the first layer, wherein the first layer is transparent to the radiation emitted by the stack of different III-V nitride semiconductor layers; wherein applying the III-V nitride layers to the composite substrate comprises; applying the interlayer on the semiconductor layer stack, detaching the composite substrate, applying a carrier to the side of the semiconductor layer stack from which the composite substrate has been detached, and detaching the interlayer.
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27. Method for producing a radiation-emitting semiconductor component whose semiconductor body includes a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surface, with at least a portion of the radiation being emitted through the first principal surface, the method comprising:
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producing a reflecting contact layer for electrically contacting said semiconductor body on the second principal surface of the semiconductor body on the semiconductor layer stack, wherein producing the contact layer comprises applying a first layer to the semiconductor layer stack and applying a second layer to the first layer, wherein the first layer is transparent to the radiation emitted by the stack of different III-V nitride semiconductor layers and the second layer reflects the radiation emitted by the stack of different III-V nitride semiconductor layers, wherein the different III-V nitride semiconductor layers are epitaxially grown on a substrate, wherein the transparent first layer is not epitaxially grown on the substrate, wherein the substrate is a composite substrate that has a substrate body and an interlayer, with a coefficient of thermal expansion of the substrate body being similar to or greater than a coefficient of thermal expansion of the III-V nitride layers, with the III-V nitride layers being deposited on the interlayer, and wherein the interlayer is applied to the substrate body by a wafer-bonding method.
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28. Method for producing a radiation-emitting semiconductor component whose semiconductor body includes a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surface, with at least a portion of the radiation being emitted through the first principal surface, the method comprising:
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producing a reflecting contact layer for electrically contacting said semiconductor body on the second principal surface of the semiconductor body on the semiconductor layer stack, wherein producing the contact layer comprises applying a first layer to the semiconductor layer stack and applying a second layer to the first layer, wherein the first layer is transparent to the radiation emitted by the stack of different III-V nitride semiconductor layers and the second layer reflects the radiation emitted by the stack of different III-V nitride semiconductor layers, wherein the different III-V nitride semiconductor layers are epitaxially grown on a substrate, wherein the transparent first layer is not epitaxially grown on the substrate, wherein the substrate is a composite substrate that has a substrate body and an interlayer, with a coefficient of thermal expansion of the substrate body being similar to or greater than a coefficient of thermal expansion of the III-V nitride layers, with the III-V nitride layers being deposited on the interlayer and structured into individual semiconductor layer stacks after being deposited, and wherein the method further comprises applying a carrier to the semiconductor layer stack, and detachment of the composite substrate.
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29. Method for producing a radiation-emitting semiconductor component whose semiconductor body includes a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surface, with at least a portion of the radiation being emitted through the first principal surface, the method comprising:
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producing a reflecting contact layer for electrically contacting said semiconductor body on the second principal surface of the semiconductor body on the semiconductor layer stack, wherein producing the contact layer comprises applying a first layer to the semiconductor layer stack and applying a second layer to the first layer, wherein the first layer is transparent to the radiation emitted by the stack of different III-V nitride semiconductor layers and the second layer reflects the radiation emitted by the stack of different III-V nitride semiconductor layers, wherein the different III-V nitride semiconductor layers are epitaxially grown on a substrate, wherein the transparent first layer is not epitaxially grown on the substrate, wherein the substrate is a composite substrate that has a substrate body and an interlayer, with a coefficient of thermal expansion of the substrate body being similar to or greater than a coefficient of thermal expansion of the III-V nitride layers, with the III-V nitride layers being deposited on the interlayer and structured into individual semiconductor layer stacks after being deposited, and wherein the method further comprises; application of an interlayer on the semiconductor layer stack, detachment of the composite substrate, application of a carrier to the side of the semiconductor layer stack from which the composite substrate has been detached; and detachment of the interlayer.
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Specification