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Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby

  • US 7,691,666 B2
  • Filed: 06/16/2005
  • Issued: 04/06/2010
  • Est. Priority Date: 06/16/2005
  • Status: Active Grant
First Claim
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1. A method of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising:

  • (a) applying, to a substrate, a seed coating comprising a colloidal solution of zinc-oxide-based nanoparticles having an average primary particle size of 5 to 200 nm;

    (b) drying the seed coating to form a porous layer of zinc-oxide-based nanoparticles;

    (c) optionally annealing the porous layer of zinc-oxide-based nanoparticles at a temperature higher than the temperature of step (a) or (b);

    (d) applying, over the porous layer of nanoparticles, an overcoat solution comprising a soluble zinc-oxide-precursor compound that converts to zinc oxide upon annealing, to form an intermediate composite film layer;

    (e) drying the intermediate composite film layer; and

    (f) annealing the dried intermediate composite film at a temperature of at least 50°

    C. to produce a semiconductor film comprising zinc-oxide-based nanoparticles supplemented by additional zinc oxide material in a film layer formed by the conversion of the zinc-oxide-precursor compound during the annealing of the composite film.

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