Method for processing laser-irradiated thin films having variable thickness

• US 7,691,687 B2
• Filed: 01/09/2007
• Issued: 04/06/2010
• Est. Priority Date: 09/16/2003
• Status: Expired due to Fees

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: Im, James S.
• Primary Examiner(s): Smith; Zandra
• Assistant Examiner(s): Duong; Khanh B
• Application Number:
  US11/651,305
• Publication Number:
  US 20070111349A1
• Time in Patent Office: 1,183 Days
• Field of Search: None
• US Class Current: 438/150
• CPC Class Codes: C30B 1/00 Single-crystal growth directly from the solid state unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30

Abstract

A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.

Claims

1. A method for processing a film, comprising:

(a) generating a first laser beam pattern from a pulsed laser beam, the first laser beam pattern having an intensity that is sufficient to at least partially melt at least a portion of a first region of a film to be crystallized;

(b) generating a second laser beam pattern from a pulsed laser beam, the second laser beam pattern having an intensity that is sufficient to at least partially melt at least a portion of a second region of the film to be crystallized,

wherein the first region of the film comprises a first thickness and the second region of the film comprises a second thickness, and the first and second thicknesses are different;

(c) irradiating the first region of the film with the first laser beam pattern to form a first crystalline region having a first grain structure; and

(d) irradiating the second region of the film with the second laser beam pattern to form a second crystalline region having a second grain structure.

2. The method of claim 1, wherein the film comprises a semiconductor material.

3. The method of claim 1, wherein the film comprises a metal.

4. The method of claim 1, wherein the first and second laser beam patterns are generated using a single laser beam source.

5. The method of claim 1, wherein the first and second laser beam patterns are generated using a plurality of laser beam sources.

6. The method of claim 1, wherein the first laser beam pattern comprises a set of patterned beamlets.

7. The method of claim 1, wherein the second laser beam pattern comprises a set of patterned beamlets.

8. The method of claim 1, wherein the steps of irradiating of the first and second regions of the film occur substantially at the same time.

9. The method of claim 1, wherein the steps of irradiating of the first and second regions of the film occur sequentially.

10. The method of claim 1, further comprising:

after step (c), repositioning the first laser beam pattern on the film to illuminate a second portion of the first region of the film, and irradiating the first region of the film as in step (c), said steps of repositioning and irradiating occurring at least once; and

after step (d), repositioning the second laser beam pattern on the film to illuminate a second portion of the second region of the film, and irradiating the second region of the film as in step (d), said steps of repositioning and irradiating occurring at least once.

11. The method of claim 10, wherein repositioning occurs by movement of the mask, the film, or both.

12. The method of claim 10, wherein the repositioned laser beams irradiate a portion of the film that overlaps with a previously irradiated portion of the film.

13. The method of claim 12, wherein the repositioned laser beams are a distance less than the lateral crystal growth of the crystallized material from a previously positioned laser beam.

14. The method of claim 1, wherein the laser irradiation of the first and second regions comprises a sequential lateral solidification process (SLS).

15. The method of claim 1, wherein the first region film thickness is greater than the second region film thickness.

16. The method of claim 1, wherein the first laser beam pattern is generated using a laser beam shaped according to a first mask and a first set of laser features, and wherein the second laser beam pattern is generated using a laser beam shaped according to a second mask and second set of laser features.

17. The method of claim 16, wherein a single laser beam source is used and the laser beam is directed through the first set of laser optics to irradiate the first film region, and the second set of laser optics to irradiate the second film region.

18. The method of claim 16, wherein a plurality of laser beam sources are used and a laser beam from a first laser beam source is directed through the first set of laser optics to irradiate the first film region, and a laser beam from a second laser beam source is directed through the second set of laser optics to irradiate the second film region.

19. The method of claim 16, wherein the masks for the first and second laser beam patterns are different.

20. The method of claim 16, wherein the intensities of the shaped laser beams of the first and second laser beam patterns are different.

21. The method of claim 4, wherein the laser beam source is selected from the group consisting of continuous wave laser, solid state laser and excimer laser.

22. The method of claim 5, wherein the laser beam source is selected from the group consisting of continuous wave laser, solid state laser and excimer laser.

23. The method of claim 1, wherein conditions for irradiation of the first and second regions of the film are selected from those suitable for sequential laser solidification, excimer laser anneal and uniform grain structure crystallization.

24. The method of claim 23, wherein the first irradiation conditions are suitable for sequential laser solidification and the second irradiation conditions are suitable for uniform grain structure crystallization.