Semiconductor device and methods for making the same
First Claim
1. A method for making source/drain tip extensions in a thin film transistor (TFT), comprising the steps of:
- a) forming a first dielectric layer adjacent to and in contact with a gate stack and in contact with regions for forming source and drain terminals of the TFT, the gate stack having a gate dielectric layer and a gate electrode, wherein the gate dielectric is between the gate electrode and a channel region of the TFT, and the first dielectric layer has a dopant therein; and
b) heating the first dielectric layer, the gate stack, and the regions for forming source and drain terminals sufficiently to diffuse an amount of the dopant from the first dielectric layer into the channel region effective to form electrically functional source/drain extensions.
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Accused Products
Abstract
Thin film transistors (TFT) and methods for making same. The TFTs generally comprise: (a) a semiconductor layer comprising source and drain terminals and a channel region therebetween; (b) a gate electrode comprising a gate and a gate dielectric layer between the gate and the channel region; (c) a first dielectric layer adjacent to the gate electrode and in contact with the source and drain terminals, the first dielectric layer comprising a material which comprises a dopant therein; and (d) an electrically functional source/drain extensions in the channel region, adjacent to the source and drain terminals, comprising a material which comprises the same dopant as the first dielectric layer.
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Citations
32 Claims
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1. A method for making source/drain tip extensions in a thin film transistor (TFT), comprising the steps of:
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a) forming a first dielectric layer adjacent to and in contact with a gate stack and in contact with regions for forming source and drain terminals of the TFT, the gate stack having a gate dielectric layer and a gate electrode, wherein the gate dielectric is between the gate electrode and a channel region of the TFT, and the first dielectric layer has a dopant therein; and b) heating the first dielectric layer, the gate stack, and the regions for forming source and drain terminals sufficiently to diffuse an amount of the dopant from the first dielectric layer into the channel region effective to form electrically functional source/drain extensions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for making source/drain tip extensions in a thin film transistor (TFT), comprising the steps of:
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a) forming a first dielectric layer adjacent to a gate stack and over or in contact with regions for forming source and drain terminals of the TFT, the gate stack having a gate dielectric layer and a gate electrode, wherein the gate dielectric is between the gate electrode and a channel region of the TFT and is recessed under a bottommost surface of the gate electrode, and the first dielectric layer has a dopant therein; and b) heating the first dielectric layer, the gate stack, and the regions for forming source and drain terminals sufficiently to diffuse an amount of the dopant from the first dielectric layer into the channel region effective to form electrically functional source/drain extensions. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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Specification