Method of fabricating oxide semiconductor device

• US 7,691,715 B2
• Filed: 07/29/2008
• Issued: 04/06/2010
• Est. Priority Date: 09/06/2005
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Kaji, Nobuyuki, Yabuta, Hisato
• Primary Examiner(s): LE, THAO P
• Application Number:
  US12/181,579
• Publication Number:
  US 20080293208A1
• Time in Patent Office: 616 Days
• Field of Search: 257/E51.005, 257/E27.099, 257/E21.591, 438/308
• US Class Current: 438/308
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/02689 using particle beams
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/3115 Doping the insulating layers
• CPC Class Codes: H01L 21/428 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.

Claims

1. A method for fabricating a device using an oxide semiconductor, the method comprising:

forming an oxide semiconductor on a substrate; and

changing a conductivity of a predetermined region of the oxide semiconductor by irradiating the predetermined region with an energy ray,

wherein the changing of the conductivity of the predetermined region is performed to increase the conductivity of the predetermined region by irradiating the predetermined region with light having a wavelength equivalent to or greater than a band-gap energy of the oxide semiconductor.

2. The method according to claim 1, wherein

the device is an oxide-semiconductor channel field-effect transistor, and

the predetermined region where the conductivity is increased is a source and a drain that is in contact with a channel of the field-effect transistor.

3. The method according to claim 1, wherein the light used to irradiate the predetermined region to increase the conductivity thereof is an X-ray.

4. The method according to claim 1, wherein the light used to irradiate the predetermined region to increase the conductivity thereof has a shortest wavelength of 0.15 nm or less.