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Deposition of complex nitride films

  • US 7,691,757 B2
  • Filed: 06/21/2007
  • Issued: 04/06/2010
  • Est. Priority Date: 06/22/2006
  • Status: Active Grant
First Claim
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1. A method for depositing a nitride-containing film onto a substrate, comprising:

  • providing a substrate in a reaction chamber;

    heating the substrate in the reaction chamber;

    flowing a first metal halide precursor into the reaction chamber in temporally separated pulses;

    flowing a second metal halide precursor into the reaction chamber in temporally separated pulses; and

    flowing a nitrogen containing precursor into the reaction chamber, wherein flowing the nitrogen-containing precursor comprises;

    flowing the nitrogen-containing precursor during the pulses of the first and second metal halide precursors to induce a thermally activated reaction between at least one of the metal halide precursors and the nitrogen-containing precursor, andflowing the nitrogen containing precursor between the pulses of the first and the second metal halide precursors.

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