Method to analyze physical and chemical properties on the surface layer of a solid

• US 7,692,145 B2
• Filed: 12/17/2007
• Issued: 04/06/2010
• Est. Priority Date: 09/16/2002
• Status: Active Grant

• Current Assignee: Alexei Alexandrovich Kalachev
• Original Assignee: Alexei Alexandrovich Kalachev
• Inventors: Blashenkov, Nikolai Mikhailovich, Myasnikova, Lyubov Petrovna, Myasnikov, Alexandr Lvovich, Ivanov, Yuri Petrovich, Kalachev, Alexei Alexandrovich, Kovalsky, Vladimir Antonovich
• Primary Examiner(s): Vanore; David A.
• Application Number:
  US11/957,603
• Publication Number:
  US 20080237488A1
• Time in Patent Office: 841 Days
• Field of Search: 422/52, 374/17, 374/161, 250/310
• US Class Current: 250/310
• CPC Class Codes: G01N 1/32 Polishing; Etching
• CPC Class Codes: G01N 13/00 Investigating surface or boundary effects, e.g. wetting power; Investigating diffusion effects; Analysing materials by determining surface, boundary, or diffusion effects scanning-probe techniques or apparatus G01Q
• CPC Class Codes: G01N 21/71 thermally excited
• CPC Class Codes: G01N 23/221 by activation analysis

Abstract

The present invention relates generally to a method for analyzing the surface and the near-surface layers of a solid and, more specifically, to a method that utilizes activating actions to analyze the physical and the chemical properties of the layers. The instant abstract is neither intended to define the invention disclosed in this specification nor intended to limit the scope of the invention in any way.

Claims

1. A method for analyzing physical and/or chemical properties of the solid body comprising the activation of said solid body by activating irradiation coming from outside of analyzed solid body, the deactivating of the solid body, and the recording of the spectrum of the energy quanta emitted by the solid body, wherein:

a. the activating irradiation is used as single pulse and its dose and exposure is chosen in such way that said activating irradiation penetrates not through the whole volume of material but only through the limited surface layer of said solid body without sufficient damage of said surface layer by activating irradiation

b. termination of said activating irradiation;

c. after termination of said activating irradiation said solid body is deactivated by keeping the solid body at a constant temperature (isothermal luminescence) and subsequently heating it when the isothermal luminescence is over;

d. the spectrum of the energy quanta emitted by the surface layer of the solid body, activated by aid activating irradiation, is recorded during the deactivation in such a way that the spectrum of the emitted energy quanta recorded at a constant temperature provides (isothermal Luminescence) data on the loosely coupled states of the surface layer and their half-lives, while the followed thermo-luminescence spectrum recorded during the heating gives information on the phase and relaxation transitions in the surface layer.

2. The method as per claim 1, wherein the measuring cycle is repeated at different energies and/or doses of irradiation to receive the information about surface layer structure at different depths (surface tomography).

3. The method as per claim 1, wherein the irradiation pulse activating the investigated surface has the power from 10-5 to 10-3 W/cm2.

4. The method of claim 1, wherein the thermo-luminescence is recorded immediately after activating irradiation is terminated.

5. The method of claim 1, where activating irradiation presents electron beam, atomar beam, molecular beam, ion beam, high energy quanta, low temperature plasma or their combinations.

6. The method of claim 1, wherein the thickness of said surface layer is below ca. 10 μ

m.

7. The method of claim 1, wherein the thickness of said surface layer is below ca. 1 μ

m.

8. The method of claim 1, wherein the thickness of said surface layer is below ca. 100 nm.

9. The method as per claim 1, wherein the thickness of said surface layer is below ca. 10 nm.

10. The method as per claim 1, wherein the thickness of said surface layer is below ca. 1 nm.