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Salicide structures for heat-influenced semiconductor applications

  • US 7,693,354 B2
  • Filed: 08/29/2008
  • Issued: 04/06/2010
  • Est. Priority Date: 08/29/2008
  • Status: Active Grant
First Claim
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1. A heater system for use with heat-influenced semiconductor devices, the system comprising:

  • a silicon substrate; and

    a salicide heating element formed on the substrate, for delivering heat radiation to a heat-influenced semiconductor device proximate the salicide heating element, wherein the salicide heating element is free standing from the heat-influenced semiconductor device and is thermally separated from the heat-influenced semiconductor device by a dielectric layer.

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