Method for process window optimized optical proximity correction
First Claim
1. A method comprising:
- obtaining a design layout including features, each feature including edge segments;
applying optical proximity corrections to the design layout to produce a first post-OPC layout;
simulating, using a computer executing model-based OPC software, a lithography process using the first post-OPC layout and a plurality of models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images;
determining a simulated resist contour for each edge segment of each feature of the design layout in each of the plurality of simulated resist images;
determining a weighted average error in a contour metric for each edge segment over the plurality of process conditions, wherein the error in the contour metric is an offset between the contour metric at each of the plurality of process conditions and the contour metric at nominal condition;
determining a retarget value for the contour metric for each edge segment using the weighted average error;
applying each retarget value to the corresponding edge to produce a retargeted layout; and
applying optical proximity corrections to the retargeted layout to produce a second post-OPC layout.
2 Assignments
0 Petitions
Accused Products
Abstract
One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.
70 Citations
16 Claims
-
1. A method comprising:
-
obtaining a design layout including features, each feature including edge segments; applying optical proximity corrections to the design layout to produce a first post-OPC layout; simulating, using a computer executing model-based OPC software, a lithography process using the first post-OPC layout and a plurality of models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images; determining a simulated resist contour for each edge segment of each feature of the design layout in each of the plurality of simulated resist images; determining a weighted average error in a contour metric for each edge segment over the plurality of process conditions, wherein the error in the contour metric is an offset between the contour metric at each of the plurality of process conditions and the contour metric at nominal condition; determining a retarget value for the contour metric for each edge segment using the weighted average error; applying each retarget value to the corresponding edge to produce a retargeted layout; and applying optical proximity corrections to the retargeted layout to produce a second post-OPC layout. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method comprising:
-
obtaining a design layout including features, each feature including edge segments; applying optical proximity corrections to the design layout to produce a first post-OPC layout; simulating using a computer executing model-based OPC software a lithography process using the first post-OPC layout and a model of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images, wherein the model of the lithography process was calibrated over all of the plurality of process conditions; determining a simulated resist contour for each edge segment of each feature of the design layout in each of the plurality of simulated resist images; determining a weighted average error in a contour metric for each edge segment over the plurality of process conditions, wherein the error in the contour metric is an offset between the contour metric at each of the plurality of process conditions and the contour metric at nominal condition; determining a retarget value for the contour metric for each edge segment using the weighted average error; applying each retarget value to the corresponding edge segment to produce a retargeted layout; and applying optical proximity corrections to the retargeted layout to produce a second post-OPC layout. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
Specification