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Method of making a bottomless via

  • US 7,694,413 B2
  • Filed: 06/30/2006
  • Issued: 04/13/2010
  • Est. Priority Date: 06/30/2006
  • Status: Expired due to Fees
First Claim
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1. A method comprising:

  • forming an opening in a dielectric layer disposed on a substrate;

    forming a barrier layer on the opening, the barrier layer comprising a material that prevents the diffusion of a metal across the barrier layer; and

    forming a seed layer on the barrier layer, the seed layer having a noble metal-copper alloy, the copper having less than 50% weight of the noble metal-copper alloy.

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