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Methods for producing low-stress carbon-doped oxide films with improved integration properties

  • US 7,695,765 B1
  • Filed: 11/12/2004
  • Issued: 04/13/2010
  • Est. Priority Date: 11/12/2004
  • Status: Active Grant
First Claim
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1. A method of preparing a carbon doped silicon oxide (CDO) film on a substrate, the method comprising:

  • (a) providing the substrate to a deposition chamber; and

    (b) contacting the substrate with a primary CDO precursor containing silicon and having a carbon-carbon triple bond and a secondary CDO precursor selected from DEMS, TMCTS and hexafluoroethane, under process conditions whereby the CDO film is formed on the substrate, such that the CDO film contains carbon-carbon triple bonds and their derivative bonds and whereby the CDO film has a dielectric constant of less than about 3.2, a net tensile stress of less than about 40 MPa, a hardness of at least about 1 GPa, and a SiC;

    SiOx bond ratio of not greater than about 0.75.

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