Methods for producing low-stress carbon-doped oxide films with improved integration properties
First Claim
1. A method of preparing a carbon doped silicon oxide (CDO) film on a substrate, the method comprising:
- (a) providing the substrate to a deposition chamber; and
(b) contacting the substrate with a primary CDO precursor containing silicon and having a carbon-carbon triple bond and a secondary CDO precursor selected from DEMS, TMCTS and hexafluoroethane, under process conditions whereby the CDO film is formed on the substrate, such that the CDO film contains carbon-carbon triple bonds and their derivative bonds and whereby the CDO film has a dielectric constant of less than about 3.2, a net tensile stress of less than about 40 MPa, a hardness of at least about 1 GPa, and a SiC;
SiOx bond ratio of not greater than about 0.75.
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Abstract
Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant (<3.2) and low residual stress without sacrificing important integration properties such as refractive index and etch rate are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to TMSA, followed by igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components or one frequency component only, and depositing the carbon doped oxide film under conditions in which the resulting dielectric layer has a net tensile stress of less than about 40 MPa, a hardness of at least about 1 GPa, and a SiC:SiOx bond ratio of not greater than about 0.75.
161 Citations
45 Claims
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1. A method of preparing a carbon doped silicon oxide (CDO) film on a substrate, the method comprising:
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(a) providing the substrate to a deposition chamber; and (b) contacting the substrate with a primary CDO precursor containing silicon and having a carbon-carbon triple bond and a secondary CDO precursor selected from DEMS, TMCTS and hexafluoroethane, under process conditions whereby the CDO film is formed on the substrate, such that the CDO film contains carbon-carbon triple bonds and their derivative bonds and whereby the CDO film has a dielectric constant of less than about 3.2, a net tensile stress of less than about 40 MPa, a hardness of at least about 1 GPa, and a SiC;
SiOx bond ratio of not greater than about 0.75. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification