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Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes

  • US 7,695,984 B1
  • Filed: 04/20/2006
  • Issued: 04/13/2010
  • Est. Priority Date: 04/20/2005
  • Status: Active Grant
First Claim
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1. A method for processing a semiconductor device using an end-point detection process, the method comprising:

  • providing a semiconductor wafer having a film to be processed;

    processing the film in a plasma environment during a determined time period;

    collecting information associated with the plasma environment during the determined time period, the information being characterized by a first signal intensity selected from an intensity of an RF signal, a light signal, a temperature signal, a pressure signal, a voltage signal, or a gas composition signal;

    extracting a change in signal intensity from the first signal intensity, the change in signal intensity having a second signal intensity;

    associating the change in signal intensity at the second intensity with an end point associated with the processing of the film in the plasma environment;

    whereupon the second signal intensity is about 0.25% or less of the first signal intensity.

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