Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes
First Claim
1. A method for processing a semiconductor device using an end-point detection process, the method comprising:
- providing a semiconductor wafer having a film to be processed;
processing the film in a plasma environment during a determined time period;
collecting information associated with the plasma environment during the determined time period, the information being characterized by a first signal intensity selected from an intensity of an RF signal, a light signal, a temperature signal, a pressure signal, a voltage signal, or a gas composition signal;
extracting a change in signal intensity from the first signal intensity, the change in signal intensity having a second signal intensity;
associating the change in signal intensity at the second intensity with an end point associated with the processing of the film in the plasma environment;
whereupon the second signal intensity is about 0.25% or less of the first signal intensity.
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Abstract
Method and system for detecting endpoint for a plasma etch process are provided. In accordance with one embodiment, the method provides a semiconductor substrate having a film to be processed thereon. The film is processed in a plasma environment during a time period to provide for device structures. Information associated with the plasma process is collected. The information is characterized by a first signal intensity. Information on a change in the first signal intensity is extracted. The change in the first signal intensity has a second signal intensity. The change in signal intensity at the second signal intensity is associated to an endpoint of processing the film in the plasma environment. The second signal intensity may be about 0.25% and less of the first signal intensity.
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Citations
22 Claims
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1. A method for processing a semiconductor device using an end-point detection process, the method comprising:
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providing a semiconductor wafer having a film to be processed; processing the film in a plasma environment during a determined time period; collecting information associated with the plasma environment during the determined time period, the information being characterized by a first signal intensity selected from an intensity of an RF signal, a light signal, a temperature signal, a pressure signal, a voltage signal, or a gas composition signal; extracting a change in signal intensity from the first signal intensity, the change in signal intensity having a second signal intensity; associating the change in signal intensity at the second intensity with an end point associated with the processing of the film in the plasma environment; whereupon the second signal intensity is about 0.25% or less of the first signal intensity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A system for in-situ monitoring of the processing of one or more films of materials using an end-point detection process, the system comprising:
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a chamber, the chamber being adapted to maintain a plasma environment therein; a susceptor coupled to the chamber, the susceptor being adapted to hold a semiconductor wafer having a film to be processed; one or more sensors operably coupled to the chamber and adapted to collect information associated with the chamber environment during a determined time period, the information being characterized by a first signal intensity selected from an intensity of an RF signal, a light signal, a temperature signal, a pressure signal, a voltage signal, or a gas composition signal; a process module coupled to the one or more sensors, the process module being adapted to extract a change in signal intensity from the first signal intensity, the change in signal intensity having a second signal intensity, the process module being adapted to associate the change in signal intensity at the second intensity with an end point associated with the processing of the film in the chamber environment; whereupon the second signal intensity is about 0.25% or less of the first signal intensity. - View Dependent Claims (22)
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Specification