Method of manufacturing semiconductor device
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- (a) forming a mask with an opening of a predetermined pattern which is made of a mask insulating film on a semiconductor substrates;
(b) forming a trench in the substrate using the mask as an etching mask;
(c) forming a gate insulating film on a surface of an inner wall of the trench with the mask used as a selective oxidation mask;
(d) removing the mask;
(e) forming a conductive film on the semiconductor substrate to fill the trench with the conductive film; and
(f) etching back the conductive film until at least a surface of the semiconductor substrate is exposed.
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Accused Products
Abstract
A method of manufacturing a semiconductor device according to an embodiment of the present invention includes: forming a first insulating film on a semiconductor substrate; forming a mask with an opening of a predetermined pattern in the first insulating film; performing anisotropic etching on the semiconductor substrate with the mask used as an etching mask to form a trench; forming a second insulating film on a surface of an inner wall of the trench with the mask used as a selective oxidation mask; removing the mask; forming a conductive film on the semiconductor substrate to fill the trench with the conductive film; and etching back the conductive film until at least a surface of the semiconductor substrate is exposed.
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Citations
18 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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(a) forming a mask with an opening of a predetermined pattern which is made of a mask insulating film on a semiconductor substrates; (b) forming a trench in the substrate using the mask as an etching mask; (c) forming a gate insulating film on a surface of an inner wall of the trench with the mask used as a selective oxidation mask; (d) removing the mask; (e) forming a conductive film on the semiconductor substrate to fill the trench with the conductive film; and (f) etching back the conductive film until at least a surface of the semiconductor substrate is exposed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification