Group III nitride based semiconductor and production method therefor
First Claim
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1. A method for producing a group III nitride based semiconductor, the method comprising:
- a wet-etching an upper surface of a first layer comprising a first group III nitride based semiconductor with an aqueous TMAH solution, to thereby form an etch pit, anda forming, on the upper surface of the first layer, a second layer comprising a second group III nitride based semiconductor so that an upper portion of the etch pit is filled with the second layer.
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Abstract
The invention provides a method for producing a group III nitride based semiconductor having a reduced number of crystal defects.
A GaN layer 2 is epitaxially grown on a sapphire substrate 1 having C-plane as a main plane (FIG. 1A). Then, the layer is wet-etched by use of a 25% aqueous TMAH solution at 85° C. for one hour, to thereby form an etch pit 4 (FIG. 1B). Then, a GaN layer 5 is grown on the GaN layer 2 through the ELO method (FIG. 1C). The thus-formed GaN layer 5 has a screw dislocation density lower than that of the GaN layer 2.
5 Citations
13 Claims
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1. A method for producing a group III nitride based semiconductor, the method comprising:
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a wet-etching an upper surface of a first layer comprising a first group III nitride based semiconductor with an aqueous TMAH solution, to thereby form an etch pit, and a forming, on the upper surface of the first layer, a second layer comprising a second group III nitride based semiconductor so that an upper portion of the etch pit is filled with the second layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Current AssigneeDENSO Corporation
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Original AssigneeKabushiki Kaisha Toyota Chuo Kenkyusho (Toyota Motor Corporation), Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
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InventorsKodama, Masahito, Hayashi, Eiko, Sugimoto, Masahiro
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Primary Examiner(s)EVERHART, CARIDAD
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Application NumberUS11/976,450Publication NumberTime in Patent Office902 DaysField of Search438/481, 438/504, 438/341, 257/E21.125, 257/E21.126US Class Current438/504CPC Class CodesH01L 21/0242 Crystalline insulating mate...H01L 21/02433 Crystal orientationH01L 21/02458 NitridesH01L 21/0254 NitridesH01L 21/02639 Preparation of substrate fo...H01L 21/0265 Pendeoepitaxy
