Mirror package and method of manufacturing the mirror package

• US 7,696,104 B2
• Filed: 05/22/2006
• Issued: 04/13/2010
• Est. Priority Date: 12/30/2005
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Won Kyoung, Lee, Hwa Sun, Choi, Min Seog, Lee, Seung Wan
• Primary Examiner(s): Vinh; Lan
• Application Number:
  US11/437,651
• Publication Number:
  US 20070166864A1
• Time in Patent Office: 1,422 Days
• Field of Search: 438/745, 438/750, 438/754, 438/7, 438/743, 438/756, 216/97, 216/99, 216/33, 216/34, 216/35, 216/97.99
• US Class Current: 438/753
• CPC Class Codes: B81B 7/0067 for controlling the passage of optical signals through the package
• CPC Class Codes: G02B 26/0833 the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD G02B26/0825 takes precedence; micromechanical devices in general B81B
• CPC Class Codes: G02B 27/0018 with means for preventing ghost images anti-reflection coatings G02B1/11
• CPC Class Codes: G02B 5/005 Diaphragms for cameras G03B9/02

Abstract

A mirror package is provided which can reflect a laser to an external screen according to a video signal when the laser enters from outside, and a method of manufacturing the mirror package. The mirror is packaged with a glass to protect from external contamination, an inlet and an outlet are formed by, for example, an anisotropic etching on the glass and blocks a reflected light reflected from the glass. The mirror package is formed as a set, combined on a wafer using a wafer level package and diced to individual chips. Subsequently, a productivity is improved and a ghost image or phenomenon is removed.

Claims

1. A method of manufacturing a mirror package in a mirror structure, the method comprising:

providing a silicon wafer;

forming an inlet, through which a laser is able to pass from the outside, and an outlet, through which the laser is able to be emitted to the outside, by anisotropic etching of the silicon wafer; and

forming a wafer module by combining the silicon wafer, a glass wafer made of a transparent material, and a mirror wafer formed with the mirror structure, so that the glass wafer combines with a surface of the silicon wafer where the inlet and the outlet are substantially formed, and the glass wafer is disposed between the silicon wafer and the mirror wafer,

wherein a width of the surface of the inlet that combines with the glass wafer is larger than a width of an opposite surface of the inlet, and a width of the surface of the outlet that combines with the glass wafer is larger than a width of an opposite surface of the outlet.

2. The method of claim 1, wherein the forming of the inlet and outlet comprises a wet etching using any one of potassium hydroxide (KOH), ethylene diamine pyrotechol (EDP), and tetramethyle ammonium hydroxide (TMAH).

3. The method of claim 1, further comprising forming the inlet and the outlet on each of a plurality of silicon wafers, and arranging the silicon wafers such that the respective inlets overlap each other and the respective outlets overlap each other.

4. The method of claim 1, further comprising:

forming a plurality of inlets and outlets on the silicon wafer;

forming a set of the mirror structures on the mirror wafer;

forming a combined wafer by combining the silicon wafer, the glass wafer and the mirror wafer together; and

dicing the combined wafer to include the inlet, the outlet and the mirror structure in each diced combined wafer.

5. The method of claim 1, wherein the silicon wafer and the glass wafer are made of materials having similar coefficients of thermal expansion.

6. The method of claim 1, wherein each of the inlet and the outlet forms a rectangular pattern on the silicon wafer, and forms a hole through the silicon wafer in the shape of a quadrangular pyramid by anisotropic etching.

7. The method of claim 6, wherein an angle between a lateral face of the inlet and a surface of the silicon wafer ranges from approximately 50 degrees to approximately 60 degrees.

8. A method of manufacturing a mirror package in a mirror structure, the method comprising:

providing a silicon wafer;

forming an inlet, through which a laser is able to pass from the outside, and an outlet, through which the laser is able to be emitted to the outside, by anisotropic etching of the silicon wafer;

forming a wafer module by combining the silicon wafer, a glass wafer made of a transparent material, and a mirror wafer formed with the mirror structure, so that the glass wafer combines with a surface of the silicon wafer where the inlet and the outlet are substantially formed, and the glass wafer is disposed between the silicon wafer and the mirror wafer; and

forming the inlet and the outlet on each of a plurality of silicon wafers, and arranging the silicon wafers such that the respective inlets overlap each other and the respective outlets overlap each other,

wherein a size of the inlets formed on the respective silicon wafers decreases as a distance from the glass wafer increases, and a size of the outlets formed on the respective silicon wafers decreases as a distance from the glass wafer increases.

9. A method of manufacturing a mirror package in a mirror structure, the method comprising:

providing a silicon wafer;

forming an inlet, through which a laser is able to pass from the outside, and an outlet, through which the laser is able to be emitted to the outside, by anisotropic etching of the silicon wafer;

forming a wafer module by combining the silicon wafer, a glass wafer made of a transparent material, and a mirror wafer formed with the mirror structure, so that the glass wafer combines with a surface of the silicon wafer where the inlet and the outlet are substantially formed, and the glass wafer is disposed between the silicon wafer and the mirror wafer; and

forming the inlet and the outlet on each of a plurality of silicon wafers, and arranging the silicon wafers such that the respective inlets overlap each other and the respective outlets overlap each other,

wherein each of the inlets and outlets is formed by a dry etching, such that a size of the inlets formed on the respective silicon wafers decreases as a distance from the glass wafer increases, and a size of the outlets formed on the respective silicon wafers decreases as a distance from the glass wafer increases.