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Semiconductor device including a trench with a curved surface portion and method of manufacturing the same

  • US 7,696,569 B2
  • Filed: 09/19/2007
  • Issued: 04/13/2010
  • Est. Priority Date: 09/22/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a trench provided in a semiconductor substrate;

    a gate electrode formed in the trench through a gate dielectric film; and

    a diffusion layer formed in a vicinity of the trench,wherein the trench comprises;

    an opening portion provided in a surface of the semiconductor substrate;

    a recess curved surface portion comprising a cross-sectional contour having a substantially circular arc shape; and

    a connection curved surface portion connecting the recess curved surface portion and the opening portion, andwherein the connection curved surface portion comprises a continuous curved surface between the opening portion and the recess curved surface portion.

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