Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
First Claim
Patent Images
1. A computer-implemented method of modifying a photomask pattern for producing a target pattern in a region of a photomask comprising:
- providing a functional representation of a first photomask pattern comprising a first plurality of values over the area of the region of the photomask;
modifying the functional representation of the first photomask pattern to produce a functional representation of a second photomask pattern based, at least in part, upon a merit function for the second photomask pattern and the target pattern;
wherein the functional representation of the second photomask pattern comprises a second plurality of values over the area of the region of the photomask;
wherein the functional representation of the first photomask pattern is capable of being fractured into a smaller number of rectangles than the functional representation of the second photomask pattern; and
wherein the functional representation of the second photomask pattern includes polygons having a smaller number of vertices than corresponding polygons in the functional representation of the first photomask pattern; and
determining a functional representation of a third photomask pattern that is capable of being fractured into a smaller number of rectangles than the functional representation of the second photomask pattern;
wherein the functional representation of the third photomask pattern comprises a third plurality of values over the area of the region of the photomask; and
wherein a merit function over the area of the region of the photomask for the third photomask pattern and the target pattern is improved relative to a merit function over the area of the region of the photomask for the first photomask pattern and the target pattern.
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Abstract
Photomask patterns are represented using contours defined by mask functions or other formats. Given target pattern, contours may be optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimized patterns or blocks may be simplified for mask manufacturing.
175 Citations
15 Claims
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1. A computer-implemented method of modifying a photomask pattern for producing a target pattern in a region of a photomask comprising:
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providing a functional representation of a first photomask pattern comprising a first plurality of values over the area of the region of the photomask; modifying the functional representation of the first photomask pattern to produce a functional representation of a second photomask pattern based, at least in part, upon a merit function for the second photomask pattern and the target pattern; wherein the functional representation of the second photomask pattern comprises a second plurality of values over the area of the region of the photomask; wherein the functional representation of the first photomask pattern is capable of being fractured into a smaller number of rectangles than the functional representation of the second photomask pattern; and wherein the functional representation of the second photomask pattern includes polygons having a smaller number of vertices than corresponding polygons in the functional representation of the first photomask pattern; and determining a functional representation of a third photomask pattern that is capable of being fractured into a smaller number of rectangles than the functional representation of the second photomask pattern; wherein the functional representation of the third photomask pattern comprises a third plurality of values over the area of the region of the photomask; and wherein a merit function over the area of the region of the photomask for the third photomask pattern and the target pattern is improved relative to a merit function over the area of the region of the photomask for the first photomask pattern and the target pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification