Semiconductor device

• US 7,699,232 B2
• Filed: 01/28/2005
• Issued: 04/20/2010
• Est. Priority Date: 02/06/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Imai, Keitaro
• Primary Examiner(s): Lee; Michael G
• Assistant Examiner(s): Haupt; Kristy A
• Application Number:
  US11/044,828
• Publication Number:
  US 20050174845A1
• Time in Patent Office: 1,908 Days
• Field of Search: 235/492, 365/225.7, 365/96, 365/200
• US Class Current: 235/492
• CPC Class Codes: G11C 17/16 using electrically-fusible links
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components

Abstract

A semiconductor device which may be used as an ID chip and data may be rewritten only one time. In addition, a semiconductor device may be used as an ID chip and data may be written except when manufacturing the chip. The invention has a modulating circuit, a demodulating circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate. The modulating circuit and the demodulating circuit are electrically connected to an antenna circuit, the demodulating circuit is connected to the logic circuit, the memory circuit stores an output signal of the logic circuit, and the memory circuit is a fuse memory circuit using a fuse element.

Claims

1. A semiconductor device comprising:

a modulating circuit formed over an insulating substrate;

a demodulating circuit formed over the insulating substrate;

a logic circuit formed over the insulating substrate wherein the demodulating circuit is operationally connected to the logic circuit;

a fuse memory circuit formed over the insulating substrate and comprising a thin film transistor and a fuse element wherein the fuse memory circuit has a function of storing an output signal of the logic circuit; and

an antenna circuit, wherein the modulating circuit and the demodulating circuit are electrically connected to the antenna circuit,

wherein the logic circuit comprises a switch and a volatile memory circuit,

wherein a writing state storage bit is stored in the volatile memory circuit,

wherein the logic circuit controls whether writing of the fuse memory circuit is possible or not by turning on/off the switch depending on data stored in the writing state storage bit, and

wherein at least one of the modulating circuit, the demodulating circuit, and the logic circuit comprises a thin film transistor formed over the insulating substrate.

2. The semiconductor device according to claim 1, wherein the fuse memory circuit comprises a control circuit for writing data only one time.

3. The semiconductor device according to claim 1, wherein the fuse element carries out a storage operation by blowing a metal wiring.

4. The semiconductor device according to claim 1, wherein the fuse element carries out a storage operation by blowing a semiconductor thin film.

5. The semiconductor device according to claim 1, wherein the fuse element carries out a storage operation by short-circuiting an insulating film.

6. The semiconductor device according to claim 1, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained by rectifying a signal output from the antenna circuit and boosting a voltage of the signal output from the antenna circuit.

7. The semiconductor device according to claim 1, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained with an external high voltage power source.

8. The semiconductor device according to claim 1, wherein the antenna circuit, the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit are integrally formed over the same insulating substrate.

9. The semiconductor device according to claim 1, wherein the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit are integrally formed over the same insulating substrate and the antenna circuit is formed over another insulating substrate.

10. The semiconductor device according to claim 1, wherein the insulating substrate is a glass.

11. The semiconductor device according to claim 1, wherein the insulating substrate is a plastic.

12. The semiconductor device according to claim 1, wherein the insulating substrate is a film insulator.

13. The semiconductor device according to claim 1, wherein the antenna circuit is formed over at least one of the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit.

14. The semiconductor device according to claim 1, wherein a signal input to the antenna circuit is a radio frequency signal.

15. An IC card, an IC tag, an RFID, a transponder, a paper money, a valuable instrument, a passport, electronic equipment, a bag, and clothing each comprising the semiconductor device according to claim 1.

16. A semiconductor device comprising:

a modulating circuit formed over an insulating substrate;

a demodulating circuit formed over the insulating substrate;

a logic circuit formed over the insulating substrate wherein the demodulating circuit is operationally connected to the logic circuit;

a fuse memory circuit formed over the insulating substrate and comprising a thin film transistor and a fuse element wherein the fuse memory circuit has a function of storing an output signal of the logic circuit; and

an antenna circuit, wherein the modulating circuit and the demodulating circuit are electrically connected to the antenna circuit,

wherein the logic circuit comprises a switch and a volatile memory circuit,

wherein a writing state storage bit is stored in the volatile memory circuit,

wherein at least one of the modulating circuit, the demodulating circuit, and the logic circuit comprises a thin film transistor formed over the insulating substrate, and

wherein the logic circuit controls whether writing of the fuse memory circuit is possible or not depending on data stored in the volatile memory circuit.

17. The semiconductor device according to claim 16, wherein the fuse element carries out a storage operation by blowing a metal wiring.

18. The semiconductor device according to claim 16, wherein the fuse element carries out a storage operation by blowing a semiconductor thin film.

19. The semiconductor device according to claim 16, wherein the fuse element carries out a storage operation by short-circuiting an insulating film.

20. The semiconductor device according to claim 16, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained by rectifying a signal output from the antenna circuit and boosting a voltage of the signal output from the antenna circuit.

21. The semiconductor device according to claim 16, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained with an external high voltage power source.

22. The semiconductor device according to claim 16, wherein the antenna circuit, the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit are integrally formed over the same insulating substrate.

23. The semiconductor device according to claim 16, wherein the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit are integrally formed over the same insulating substrate and the antenna circuit is formed over another insulating substrate.

24. The semiconductor device according to claim 16, wherein the insulating substrate is a glass.

25. The semiconductor device according to claim 16, wherein the insulating substrate is a plastic.

26. The semiconductor device according to claim 16, wherein the insulating substrate is a film insulator.

27. The semiconductor device according to claim 16, wherein the antenna circuit is formed over at least one of the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit.

28. The semiconductor device according to claim 16, wherein a signal input to the antenna circuit is a radio frequency signal.

29. An IC card, an IC tag, an RFID, a transponder, a paper money, a valuable instrument, a passport, electronic equipment, a bag, and clothing each comprising the semiconductor device according to claim 16.

30. A semiconductor device comprising:

a modulating circuit formed over an insulating substrate;

a demodulating circuit formed over the insulating substrate;

a logic circuit formed over the insulating substrate wherein the demodulating circuit is operationally connected to the logic circuit;

a first memory circuit to which data is capable of being written only one time formed over the insulating substrate and comprising a thin film transistor and wherein the first memory circuit has a function of storing an output signal of the logic circuit; and

an antenna circuit, wherein the modulating circuit and the demodulating circuit are electrically connected to the antenna circuit,

wherein the logic circuit comprises a switch and a second memory circuit,

wherein a writing state storage bit is stored in the second memory circuit,

wherein the second memory is a volatile memory,

wherein the logic circuit controls whether writing of the first memory circuit is possible or not by turning on/off the switch depending on data stored in the writing state storage bit, and

wherein at least one of the modulating circuit, the demodulating circuit, and the logic circuit comprises a thin film transistor formed over the insulating substrate.

31. A semiconductor device comprising:

a modulating circuit;

a demodulating circuit;

a logic circuit wherein the demodulating circuit is operationally connected to the logic circuit;

a fuse memory circuit for storing an output signal of the logic circuit, the fuse memory circuit comprising a first thin film transistor and a fuse element over an insulating substrate; and

an antenna circuit electrically connected to the modulating circuit and the demodulating circuit,

wherein the logic circuit comprises a switch and a volatile memory circuit,

wherein a writing state storage bit is stored in the volatile memory circuit,

wherein the logic circuit controls whether writing of the fuse memory circuit is possible or not depending on data stored in the volatile memory circuit,

wherein at least one of the modulating circuit, the demodulating circuit, and the logic circuit comprises a second thin film transistor, and

wherein each of the first thin film transistor and the second thin film transistor comprises a semiconductor layer formed over the insulating substrate with an adhesive layer interposed therebetween.

32. The semiconductor device according to claim 31, wherein the fuse memory circuit comprises a control circuit for writing data only one time.

33. The semiconductor device according to claim 31, wherein the fuse element carries out a storage operation by short-circuiting an insulating film.

34. The semiconductor device according to claim 31, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained by rectifying a signal output from the antenna circuit and boosting a voltage of the signal output from the antenna circuit.

35. The semiconductor device according to claim 31, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained with an external high voltage power source.

36. The semiconductor device according to claim 31, wherein the antenna circuit, the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit are integrally formed over the same insulating substrate.

37. The semiconductor device according to claim 31, wherein the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit are integrally formed over the same insulating substrate and the antenna circuit is formed over another insulating substrate.

38. The semiconductor device according to claim 31, wherein the insulating substrate is a film insulator.

39. The semiconductor device according to claim 31, wherein the antenna circuit is formed over at least one of the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit.

40. The semiconductor device according to claim 31, wherein a signal input to the antenna circuit is a radio frequency signal.

41. An IC card, an IC tag, an RFID, a transponder, a paper money, a valuable instrument, a passport, electronic equipment, a bag, and clothing each comprising the semiconductor device according to claim 31.