Methods of assembling integrated circuit packages

• US 7,700,406 B2
• Filed: 06/28/2007
• Issued: 04/20/2010
• Est. Priority Date: 05/17/2007
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Jiang, Tongbi, Chye, Lim Thiam, Fee, Setho Sing
• Primary Examiner(s): Garber; Charles D
• Assistant Examiner(s): Ahmadi; Mohsen
• Application Number:
  US11/770,451
• Publication Number:
  US 20080284000A1
• Time in Patent Office: 1,027 Days
• Field of Search: 257/E21.508, 257/E21.509
• US Class Current: 438/106
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/81193 wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/81894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/10 : Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Claims

1. A method of assembling an integrated circuit package, comprising:

providing a semiconductor die having integrated circuitry associated therewith, the die comprising electrically conductive bond pad regions and electrically conductive caps over the bond pad regions, the electrically conductive caps being along a top surface of the die and including at least two different conductive layers, one of the at least two different conductive layers being an inner layer and the other being an outer layer;

the electrically conductive caps having first planar outer surfaces along the outer layer;

providing an interposer having electrically conductive projections associated therewith;

the projections having second planar outer surfaces;

bonding balls directly to the first planar outer surfaces of the electrically conductive caps utilizing vibrational energy having a frequency of at least about one kilohertz;

after bonding the balls to the first planar outer surfaces of the electrically conductive caps, providing z-axis conductive material over the balls;

the z-axis conductive material having a substantially planar upper surface that extends across the balls and that extends across regions of the semiconductor die between the balls;

the z-axis conductive material entirely surrounding exposed surfaces of the balls;

the z-axis conductive material being in a non-conductive form as the z-axis conductive material is provided over and between the

after providing the z-axis conductive material, pressing the projections of the interposer through the z-axis conductive material until the projections directly contact the balls;

after the projections are pressed through the z-axis conductive material, the z-axis conductive material filling gaps between curved regions of the balls and the first and second planar outer surfaces, and the z-axis conductive material being compressed in said gaps so that the z-axis conductive material becomes electrically conductive within the gaps to impose conductivity across said gaps; and

utilizing vibrational energy having a frequency of at least about one kilohertz to bond the balls directly to the second planar outer surfaces of the electrically conductive projections while compressing the z-axis conductive material within said gaps.

2. The method of claim 1 wherein the balls comprise copper.

3. The method of claim 1 wherein the balls comprise gold.

4. The method of claim 1 wherein the electrically conductive bond pad regions comprise one or both of Al and Cu;

and wherein one or more of the at least two different conductive layers of the electrically conductive caps include one or more of Ag, Au, B, Co, Cr, Ni, P, Pd, Pt, Ta, Ti, V and W.

5. The method of claim 1 wherein the electrically conductive bond pad regions comprise aluminum.

6. The method of claim 5 wherein the inner layer comprises nickel and the outer layer comprises gold.

7. A method of assembling an integrated circuit package, comprising:

providing a semiconductor die having integrated circuitry associated therewith, the die comprising electrically conductive bond pad regions and electrically conductive caps over the bond pad regions;

the electrically conductive caps having first planar outer surfaces;

providing an interposer having electrically conductive projections associated therewith;

the projections having second planar outer surfaces;

bonding balls directly to the first planar outer surfaces of the electrically conductive caps;

after bonding the balls to the first planar outer surfaces of the electrically conductive caps, providing underfill material over and between the balls;

the underfill material entirely surrounding exposed surfaces of the balls;

the underfill material having a substantially planar upper surface that extends across the balls and that extends across regions of the semiconductor die between the balls;

after providing the underfill material, pressing the projections of the interposer through the underfill material until the projections directly contact the balls;

the underfill being z-axis conductive material;

the projections compressing the z-axis conductive material within gaps between curved regions of the balls and the first and second planar outer surfaces to convert the z-axis conductive material within said gaps from a non-conductive form to an electrically conductive form and to thereby impose conductivity across said gaps; and

utilizing vibrational energy having a frequency of at least about one kilohertz to bond the balls directly to the second planar outer surfaces of the electrically conductive projections while compressing the z-axis conductive material within said gaps.