Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
First Claim
1. A method for ion implanting a species into a layer of a workpiece in a chamber, said method comprising:
- placing said workpiece in a processing zone of said chamber bounded by a chanter side wall and a chamber ceiling facing said workpiece and between a pair or ports of said chamber near generally opposite sides of said processing zone and connected together by a conduit external of said chamber;
introducing into said chamber a process gas comprising the species to be implanted;
generating from said process gas a plasma current and causing said plasma current to oscillate in a circulatory reentrant path comprising said conduit and said processing zone.
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Abstract
A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.
209 Citations
89 Claims
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1. A method for ion implanting a species into a layer of a workpiece in a chamber, said method comprising:
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placing said workpiece in a processing zone of said chamber bounded by a chanter side wall and a chamber ceiling facing said workpiece and between a pair or ports of said chamber near generally opposite sides of said processing zone and connected together by a conduit external of said chamber; introducing into said chamber a process gas comprising the species to be implanted; generating from said process gas a plasma current and causing said plasma current to oscillate in a circulatory reentrant path comprising said conduit and said processing zone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89)
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Specification