Thin film transistor array substrate, method for manufacturing the same, liquid crystal display having the substrate, and method for manufacturing the liquid crystal display

• US 7,700,949 B2
• Filed: 10/03/2005
• Issued: 04/20/2010
• Est. Priority Date: 10/06/2004
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Song, Keun-Kyu, Yang, Young-Chol
• Primary Examiner(s): Le; Dung A.
• Application Number:
  US11/240,550
• Publication Number:
  US 20060071212A1
• Time in Patent Office: 1,660 Days
• Field of Search: 257 57- 59, 257 66- 72, 257347-350, 257E29273-E29299, 257/E29.314, 257/E29.32, 257/E23.016, 349/144, 349 38- 39, 349 41- 43, 349/142, 349/143, 349/199, 438/30, 438155-158, 438 48- 52
• US Class Current: 257/59
• CPC Class Codes: G02F 1/136259 Repairing; Defects
• CPC Class Codes: G02F 1/136263 Line defects
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

A liquid crystal display has, a plurality of pixel including a switching element, a plurality of gate lines extending transversally, a plurality of data lines extending longitudinally, a first storage electrode line extending transversally, a second storage electrode line extending longitudinally, a third storage electrode line connecting two of the adjacent second storage electrode line, a repair assistant formed in an area that the data line crosses over the third storage electrode line. The liquid crystal display can be repaired with good quality by shortening the repair path.

Claims

1. A thin film transistor substrate, comprising:

a thin film transistor;

a gate line extending in a first direction and which transmits a gate signal to the thin film transistor;

a data line extending in a second direction and which transmits a data signal to the thin film transistor;

a plurality of first storage electrode lines extending in the first direction;

a plurality of second storage electrode lines extending in the second direction;

a plurality of third storage electrode lines connecting adjacent second storage electrode lines; and

a repair assistant formed where a third storage electrode line of the plurality of the third storage electrode lines overlaps the data line, the repair assistant overlapping the third storage electrode line;

wherein the data line is located between adjacent second storage electrode lines and disposed between the third storage electrode line and the repair assistant, and

wherein the third storage electrode line is formed on a different layer from the repair assistant.

2. The thin film transistor substrate of claim 1,

wherein the repair assistant is coupled to the data line through a contact hole.

3. The thin film transistor substrate of claim 2, further comprising:

a bridge crossing over the gate line;

wherein the bridge couples the first storage electrode line to the second storage electrode line.

4. A liquid crystal display, comprising:

a display area comprising a gate line, a data line, and a thin film transistor;

a first storage electrode line extending in a first direction substantially parallel to the gate line;

a second storage electrode line extending in a second direction substantially perpendicular to the gate line;

a third storage electrode line connecting the second storage electrode line in adjacent pixels;

a repair assistant formed where the data line overlaps the third storage electrode line, the repair assistant overlapping the data line; and

a repair line extending in the first direction and overlapping with the data line,

wherein the data line is disposed between the third storage electrode line and the repair assistant, and

wherein the third storage electrode line is formed on a different layer from the repair assistant.

5. The liquid crystal display of claim 4, further comprising:

a data driving integrated circuit.

6. The liquid crystal display of claim 5,

wherein the data driving integrated circuit comprises an operational amplifier having an output end and an input end.

7. The liquid crystal display of claim 6, further comprising:

a first terminal line coupled to the output end of the operational amplifier; and

a second terminal line coupled to the input end of the operational amplifier.

8. The liquid crystal display of claim 7,

wherein the first terminal line and the second terminal line are formed on the same layer as the data line.

9. The liquid crystal display of claim 8,

wherein the repair line is formed on the same layer as the gate line.

10. The liquid crystal display of claim 9,

wherein the repair assistant is coupled to the data line through a contact hole.

11. The liquid crystal display of claim 10, further comprising:

a bridge crossing over the gate line;

wherein the bridge couples the first storage electrode line to the second storage electrode line.

12. The liquid crystal display of claim 11,

wherein the third storage electrode line is electrically coupled to the data line, and at least one position of the first storage electrode line and the second storage electrode line is disconnected in the adjacent pixel.

13. The liquid crystal display of claim 12,

wherein at least two places of the terminal lines are coupled to the repair lines, and at least one position of the data line is coupled to the repair line.

14. A method for manufacturing a thin film transistor substrate, comprising:

forming a gate line extending in a first direction on a substrate;

forming a first storage electrode line extending in the first direction on the substrate;

forming a second storage electrode line extending in a second direction on the substrate;

forming a third storage electrode line coupling the second storage electrode line adjacent thereto;

forming a data line extending in the second direction on the substrate; and

forming a first repair assistant overlapping the data line and the third storage electrode line,

wherein the data line is disposed between the third storage electrode line and the repair assistant, and

wherein the third storage electrode line is formed on a different layer from the repair assistant.

15. The method of claim 14, further comprising:

forming a pixel electrode on a passivation layer on the substrate; and

forming a second repair assistant overlapping with the gate line.

16. The method of claim 15, further comprising:

forming a bridge crossing over the gate line,

wherein the first repair assistant, the second repair assistant and the bridge are formed on a same layer as the pixel electrode.

17. A thin film transistor substrate, comprising:

a thin film transistor;

a gate line extending in a first direction and which transmits a gate signal to the thin film transistor;

a data line extending in a second direction and which transmits a data signal to the thin film transistor;

a first storage electrode line extending in the first direction;

a second storage electrode line extending from the first storage electrode line in the second direction;

a third storage electrode line extending from the first storage electrode line in the second direction, substantially parallel to the second storage electrode line;

a fourth storage electrode line extending obliquely from the first storage electrode line to the second storage electrode line; and

a fifth storage electrode line extending from the second storage electrode line in a direction substantially perpendicular to the fourth storage electrode line.

18. The thin film transistor substrate of claim 17, further comprising:

a sixth storage electrode line extending from the third storage electrode line in a direction substantially parallel to the fourth storage electrode line; and

a seventh storage electrode line extending from the third storage electrode line in a direction substantially parallel to the fifth storage electrode line,

wherein the sixth and seventh storage electrode lines a connected at their distal ends.

19. The thin film transistor substrate of claim 17, further comprising:

an eighth storage electrode line extending from the third storage electrode line of a first pixel to the second storage electrode line of a second pixel adjacent to the first pixel.