Method and structure for forming strained Si for CMOS devices
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate;
a strain layer formed in at least a portion of the at least one gap,wherein the strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.
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Abstract
A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.
116 Citations
12 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate; a strain layer formed in at least a portion of the at least one gap, wherein the strain layer is formed only under at least one of a source region and a drain region of the semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification