Solid-state image pickup device
First Claim
1. A solid-state image pickup device comprising:
- a semiconductor substrate including a first conductive type photoelectric converting device, a well region of a second conductive type which is opposite the first conductive type located around the photoelectric converting device and a reading circuit;
a wiring layer formed by stacking a plurality of layers of wiring including a signal line for driving said photoelectric converting device adjacent a first surface of said semiconductor substrate, a second surface of said semiconductor substrate being a light receiving plane for said photoelectric converting device; and
an electric field generating means for generating an electric field in said semiconductor substrate in a direction of depth of said semiconductor substrate and thereby leading photoelectrons in said photoelectric converting device from said second surface side to said first surface side of said photoelectric converting device.
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Accused Products
Abstract
In a rear surface incidence type CMOS image sensor having a wiring layer 720 on a first surface (front surface) of an epitaxial substrate 710 in which a photodiode, a reading circuit (an n-type region 750 and an n+ type region 760) and the like are disposed, and a light receiving plane in a second surface (rear surface), the photodiode and a P-type well region 740 on the periphery of the photodiode are disposed in a layer structure that does not reach the rear surface (light receiving surface) of the substrate, and an electric field is formed within the substrate 710 to properly lead electrons entering from the rear surface (light receiving surface) of the substrate to the photodiode. The electric field is realized by providing a concentration gradient in a direction of depth of the epitaxial substrate 710. Alternatively, the electric field can be realized by providing a rear-surface electrode 810 or 840 for sending a current.
64 Citations
42 Claims
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1. A solid-state image pickup device comprising:
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a semiconductor substrate including a first conductive type photoelectric converting device, a well region of a second conductive type which is opposite the first conductive type located around the photoelectric converting device and a reading circuit; a wiring layer formed by stacking a plurality of layers of wiring including a signal line for driving said photoelectric converting device adjacent a first surface of said semiconductor substrate, a second surface of said semiconductor substrate being a light receiving plane for said photoelectric converting device; and an electric field generating means for generating an electric field in said semiconductor substrate in a direction of depth of said semiconductor substrate and thereby leading photoelectrons in said photoelectric converting device from said second surface side to said first surface side of said photoelectric converting device. - View Dependent Claims (2)
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3. A solid-state image pickup device comprising:
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a semiconductor substrate including an image pickup pixel unit having a plurality of pixels each including a photoelectric converting device and a reading circuit in a two-dimensional array; a wiring layer formed by stacking a plurality of layers of wiring including a signal line for driving said image pickup pixel unit adjacent a first surface of said semiconductor substrate, a second surface of said semiconductor substrate being a light receiving plane for said photoelectric convening device; and an electric field generating means for generating an electric field in said semiconductor substrate in a direction of depth of said semiconductor substrate and thereby leading photoelectrons in said photoelectric convening device from said second surface side to said first surface side entering from the light receiving plane of said semiconductor substrate to the photoelectric converting device characterized in that; said electric field generating means generates the electric field in the direction of the depth of said semiconductor substrate in a region having ½
or more of the depth of said semiconductor substrate from the second surface of said semiconductor substrate.
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4. A solid-state image pickup device comprising:
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a semiconductor substrate including an image pickup pixel unit having a plurality of pixels each including a first conductive type photoelectric convening device, a well region of a second conductive type which is opposite the first conductive type located around the photoelectric converting device and a reading circuit; a wiring layer formed by stacking a plurality of layers of wiring including a signal line for driving said image pickup pixel unit adjacent a first surface of said semiconductor substrate, a second surface of said semiconductor substrate being a light receiving plane for said photoelectric converting device; and an electric field generating means for generating an electric field in said semiconductor substrate in a direction of depth of said semiconductor substrate and thereby leading photoelectrons in said photoelectric converting device from said second surface side to said first surface side characterized in that; said electric field generating means generates the electric field in the direction of the depth of said semiconductor substrate by applying a voltage to an electrode disposed over a second surface side of said semiconductor substrate. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of fabricating a solid-state image pickup device, said solid-state image pickup device comprising:
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providing a semiconductor substrate having an image pickup pixel unit having a plurality of pixels each including a first conductive type photoelectric converting device, a well region of a second conductive type which is opposite the first conductive type located around the photoelectric converting device and a reading circuit; forming a wiring layer by stacking a plurality of layers of wiring including a signal line for driving said image pickup pixel unit adjacent a first surface of said semiconductor substrate, a second surface of said semiconductor substrate being a light receiving plane for said photoelectric convening device; providing an electric field generating means for generating an electric field in said semiconductor substrate in a direction of depth of said semiconductor and thereby leading photoelectrons in said photoelectric converting device from said second surface side to said first surface side; and characterized in that; said photoelectric convening device is a photodiode and said well region is a P-type well region.
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16. A method of fabricating a solid-state image pickup device, said solid-state image pickup device comprising:
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providing a semiconductor substrate having an image pickup pixel unit having a plurality of pixels each including a photoelectric converting device and a reading circuit in a two-dimensional array; forming a wiring layer by stacking a plurality of layers of wiring including a signal line for driving said image pickup pixel unit over a first surface of said semiconductor substrate, a second surface of said semiconductor substrate being a light receiving plane for said photoelectric convening device; providing an electric field generating means for generating an electric field in said semiconductor substrate in a direction of depth of said semiconductor substrate such that said electric field leads photoelectrons from the light receiving plane side of said semiconductor substrate to the photoelectric converting device; and characterized in that; said electric field generating means generates the electric field in the direction of the depth of said semiconductor substrate in a region having ½
or more of the depth of said semiconductor substrate from the second surface of said semiconductor substrate.
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17. A method of fabricating a solid-state image pickup device, said solid-state image pickup device comprising:
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providing a semiconductor substrate having an image pickup pixel unit having a plurality of pixels each including a first conductivity type photoelectric converting device, a well region of a second conductive type which is opposite the first conductive type located around the photoelectric converting device and a reading circuit; forming a wiring layer by stacking a plurality of layers of wiring including a signal line for driving said image pickup pixel unit adjacent a first surface of said semiconductor substrate, a second surface of said semiconductor substrate being a light receiving plane for said photoelectric converting device; providing an electric field generating means for generating an electric field in said semiconductor substrate in a direction of depth of said semiconductor substrate and thereby leading photoelectrons in said photoelectric converting device from said second surface side to said first surface side; and characterized in that; said electric field generating means generates the electric field in the direction of the depth of said semiconductor substrate by applying a voltage to an electrode disposed at a second surface side of said semiconductor substrate. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. An electronic apparatus having a solid-state image pickup device, said solid-state image pickup device comprising:
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a semiconductor substrate having an image pickup pixel unit with a plurality of pixels each including a first conductivity type photoelectric converting device, a well region of a second conductive type which is opposite the first conductive type located around the photoelectric converting device and a reading circuit; and a wiring layer formed by stacking a plurality of layers of wiring including a signal line for driving said image pickup pixel unit adjacent a first surface of said semiconductor substrate, a second surface of said semiconductor substrate being a light receiving plane for said photoelectric converting device, said electronic apparatus characterized in that; said solid-state image pickup device has an electric field generating means for generating an electric field in said semiconductor substrate in a direction of depth of said semiconductor substrate and thereby leading photoelectrons in said photoelectric converting device from said second surface side to said first surface side; and characterized in that; said electric field generating means generates the electric field in the direction of the depth of said semiconductor substrate in a region having ½
of the depth of said semiconductor substrate from the second surface of said semiconductor substrate.
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29. An electronic apparatus having a solid-state image pickup device, said solid-state image pickup device comprising:
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a semiconductor substrate having an image pickup pixel unit with a plurality of pixels each including a first conductivity type photoelectric converting device, a well region of a second conductive type which is opposite the first conductive type located around the photoelectric converting device and a reading circuit; and a wiring layer formed by stacking a plurality of layers of wiring including a signal line for driving said image pickup pixel unit adjacent a first surface of said semiconductor substrate, a second surface of said semiconductor substrate being a light receiving plane for said photoelectric converting device, said electronic apparatus characterized in that; said solid-state image pickup device has an electric field generating means for generating an electric field in said semiconductor substrate in a direction of depth of said semiconductor substrate and thereby leading photoelectrons in said photoelectric converting device from said second surface side to said first surface side; and characterized in that; said electric field generating means generates the electric field in the direction of the depth of said semiconductor substrate by applying a voltage to an electrode disposed on a second surface side of said semiconductor substrate. - View Dependent Claims (30, 31, 32, 33, 34)
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35. An imaging device comprising:
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a substrate having a first and a second surface; a transistor formed at said first surface; a first conductivity type light-electricity conversion region formed at said first surface; an electrode formed above said second surface; wherein said imaging device has an electric field provided between the first and a second surface sides. - View Dependent Claims (36)
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37. An imaging device comprising:
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a substrate having a first and a second surface; a transistor formed on said first surface; a first conductivity type light-electricity conversion region formed at said first surface and a second conductivity type well region located around the light-electricity conversion region; wherein said imaging device has a drift function by which electrons are accelerated from a second surface side to a first surface side; and said electrons are caused by radiated light from said second surface side, further comprising a transparent electrode.
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38. An imaging device comprising:
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a substrate having a first and a second surface; a transistor formed on said first surface; a first conductivity type light-electricity conversion region formed at said first surface and a second conductivity type well region located around the light-electricity conversion region; an insulating layer formed above said second surface; wherein said substrate has a drift region which has non-uniform impurity distribution and is formed below said light-electricity conversion region, further comprising a transparent electrode.
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39. An imaging device comprising:
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a substrate having a first and a second surface; a transistor formed on said first surface; a first conductivity type light-electricity conversion region formed at said first surface and a second conductivity type well region located around the light-electricity conversion region; an insulating layer formed above said second surface; wherein said substrate has a drift region which has non-uniform impurity distribution and is formed below said light-electricity conversion region; and
further comprising a transparent electrode. - View Dependent Claims (40, 41, 42)
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Specification