System, masks, and methods for photomasks optimized with approximate and accurate merit functions

• US 7,703,049 B2
• Filed: 10/06/2006
• Issued: 04/20/2010
• Est. Priority Date: 10/06/2005
• Status: Active Grant

• Current Assignee: Synopsys Incorporated
• Original Assignee: Luminescent Technologies, Inc. (KLA Corporation)
• Inventors: Abrams, Daniel S., Peng, Danping
• Primary Examiner(s): DO, THUAN V
• Application Number:
  US11/539,601
• Publication Number:
  US 20070186206A1
• Time in Patent Office: 1,292 Days
• Field of Search: 716/2, 716/4, 716/19
• US Class Current: 716/50
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G06F 2119/18 Manufacturability analysis or optimisation for manufacturability
• CPC Class Codes: G06F 30/39 Circuit design at the physical level physical level design for reconfigurable circuits G06F30/347
• CPC Class Codes: Y02P 90/02 Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Abstract

Photomask patterns are represented using contours defined by mask functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks. An accurate, slower merit function may be used to determine adjustment parameters for a faster, approximate merit function. The faster merit function may be used for iteration and adjusted based on the adjustment parameters.

Claims

1. A computer-implemented method for modifying a first pattern associated with a photomask, comprising:

evaluating a first merit function corresponding to the first pattern, wherein the first merit function indicates a first degree of similarity between a printed wafer pattern for the photomask associated with the first pattern and a desired target pattern;

evaluating a second merit function corresponding to the first pattern, wherein the second merit function indicates a second degree of similarity between the printed wafer pattern for the photomask associated with the first pattern and the desired target pattern;

determining, using at least one processor in the computer, adjustment parameters between the first merit function and the second merit function for the first pattern, wherein a summation of results obtained for the second merit function and the adjustment parameters using the first pattern as an input approximately equals results obtained for the first merit function using the first pattern as an input; and

iteratively modifying the first pattern based, at least in part, on the second merit function and the adjustment parameters.

2. The computer-implemented method of claim 1, wherein the second merit function can be computed faster than the first merit function;

and

wherein the first merit function more accurately approximates the first pattern than the second merit function.

3. The computer-implemented method of claim 1, wherein the adjustment parameters are based, at least in part, upon a difference between the results obtained by the first merit function and the results obtained by the second merit function.

4. The computer-implemented method of claim 1, wherein the adjustment parameters are determined in part by the results of an experiment in a fab.

5. The computer-implemented method of claim 1, further comprising selecting a modified pattern to be used as an optimized pattern for the desired target pattern based on a comparison of the second merit function and a threshold value.

6. The computer-implemented method of claim 1, wherein the first pattern is represented as a function with a plurality of values across an area of the photomask.

7. The computer-implemented method of claim 1, wherein the function is a distance function.

8. The computer-implemented method of claim 1, wherein the first pattern is represented as a plurality of pixels across an area of the photomask.