Technique for determining a mask pattern corresponding to a photo-mask
First Claim
1. A computer-implemented method for determining a mask pattern to be used on a photo-mask in a photolithographic process, wherein the computer is programmed to perform the method and wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, comprising:
- providing a first mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask;
determining a first function corresponding to the first mask pattern, wherein the range of the first function has a cardinality that is greater than the number of distinct types of regions of the first mask pattern, and wherein the domain of the first function corresponds to the plane of the first mask pattern; and
generating a second function based, at least in part, on the first function, wherein the second function corresponds to a second mask pattern.
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Abstract
Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
137 Citations
24 Claims
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1. A computer-implemented method for determining a mask pattern to be used on a photo-mask in a photolithographic process, wherein the computer is programmed to perform the method and wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, comprising:
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providing a first mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask; determining a first function corresponding to the first mask pattern, wherein the range of the first function has a cardinality that is greater than the number of distinct types of regions of the first mask pattern, and wherein the domain of the first function corresponds to the plane of the first mask pattern; and generating a second function based, at least in part, on the first function, wherein the second function corresponds to a second mask pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A computer-program product for use in conjunction with a computer system, the computer-program product comprising a computer-readable storage medium and a computer-program mechanism embedded therein for determining a mask pattern to be used on a photo-mask in a photolithographic process, wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, the computer-program mechanism including:
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instructions for providing a first mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask; instructions for determining a first function corresponding to the first mask pattern, wherein the range of the first function has a cardinality that is greater than the number of distinct types of regions of the first mask pattern, and wherein the domain of the first function corresponds to the plane of the first mask pattern; and instructions for generating a second function based, at least in part, on the first function, wherein the second function corresponds to a second mask pattern.
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22. A computer system, comprising:
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at least one processor; at least one memory; and at least one program module, the program module stored in the memory and configured to be executed by the processor, wherein at least the program module is for determining a mask pattern to be used on a photo-mask in a photolithographic process, and wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, at least the program module including; instructions for providing a first mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask; instructions for determining a first function corresponding to the first mask pattern, wherein the range of the first function has a cardinality that is greater than the number of distinct types of regions of the first mask pattern, and wherein the domain of the first function corresponds to the plane of the first mask pattern; and instructions for generating a second function based, at least in part, on the first function, wherein the second function corresponds to a second mask pattern.
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23. A photo-mask for use in a photolithographic process, wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, and wherein a mask pattern to which the photo-mask corresponds is determined in a process including the operations of:
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providing a first mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask; determining a first function corresponding to the first mask pattern, wherein the range of the first function has a cardinality that is greater than the number of distinct types of regions of the first mask pattern, and wherein the domain of the first function corresponds to the plane of the first mask pattern; and generating a second function based, at least in part, on the first function, wherein the second function corresponds to a second mask pattern.
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24. A semiconductor wafer, wherein the semiconductor wafer is produced in a photo-lithographic process that includes a photo-mask, wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, and wherein a mask pattern to which the photo-mask corresponds is determined in a process including the operations of:
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providing a first mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask; determining a first function corresponding to the first mask pattern, wherein the range of the first function has a cardinality that is greater than the number of distinct types of regions of the first mask pattern, and wherein the domain of the first function corresponds to the plane of the first mask pattern; and generating a second function based, at least in part, on the first function, wherein the second function corresponds to a second mask pattern.
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Specification