Method for producing a semiconductor wafer with profiled edge

• US 7,704,126 B2
• Filed: 05/04/2007
• Issued: 04/27/2010
• Est. Priority Date: 05/11/2006
• Status: Expired due to Fees

• Current Assignee: Siltronic AG (Dr. Alexander Wacker Familiengesellschaft Mit Beschrã¤Nkter Haftung)
• Original Assignee: Siltronic AG (Dr. Alexander Wacker Familiengesellschaft Mit Beschrã¤Nkter Haftung)
• Inventors: Huber, Anton, Mattes, Joachim, Moser, Joerg
• Primary Examiner(s): ROSE, ROBERT A
• Application Number:
  US11/744,230
• Publication Number:
  US 20070264911A1
• Time in Patent Office: 1,089 Days
• Field of Search: 451/43, 451/44, 451/57, 451/58, 451/63, 451/41
• US Class Current: 451/44
• CPC Class Codes: H01L 21/02021 Edge treatment, chamfering

Abstract

Semiconductor wafers with profiled edges, are produced with decreased losses due to edge or other damage by separating a semiconductor wafer from a crystal; profiling the edge in a profile producing step wherein the edge is mechanically machined to a profile that is true to scale with respect to a predefined target profile; mechanically machining the wafer to reduce the a thickness of the semiconductor wafer; and machining the edge profile to acquire the target profile.

Claims

1. A method for producing a semiconductor wafer with front and back sides and a profiled edge, comprising the following steps, in the order given:

selecting a target profile for the profiled edge;

separating a semiconductor wafer from a crystal;

producing an edge profile in an edge profile producing step by a first grinding of the edge to acquire a profile that is true to scale with respect to the target profile, wherein the first grinding is performed with a grinding tool with rough grit;

machining at least one side of the wafer in a mechanical machining step, in which a thickness of the semiconductor wafer is reduced; and

further machining the edge in an edge profile machining step by a second grinding of the edge to acquire the target profile, wherein the second grinding is performed with a grinding tool with fine grit and the edge is smoothed thereby; and

etching and polishing the semiconductor wafer, wherein a chemical mechanical polishing of the edge is dispensed with after the edge profile machining step.

2. The method of claim 1, wherein in the edge profile producing step, an elliptical form of the semiconductor wafer is converted into a round form.

3. The method of claim 1, wherein the mechanical machining step in which the thickness of the semiconductor wafer is reduced, and the edge profile producing step are carried out simultaneously.

4. The method of claim 1, wherein the grit of the grinding tool with rough grit corresponds to an average grain size of 15 μ

m to 0.5 μ

m.

5. The method of claim 1, wherein the edge profile producing step comprises two or more partial edge profile producing steps.

6. The method of claim 1, wherein the edge profile machining step comprises two or more partial edge profile machining steps.

7. The method of claim 1, wherein the step of machining at least one side of the wafer comprises double-side grinding which machines both the front and rear surfaces of the wafer.

8. The method of claim 1, wherein the wafer is etched and subjected to double-sided fine grinding, and then the wafer front and rear surfaces are polished.