Technique for the growth of planar semi-polar gallium nitride

• US 7,704,331 B2
• Filed: 01/09/2007
• Issued: 04/27/2010
• Est. Priority Date: 03/10/2005
• Status: Active Grant

• Current Assignee: Japan Science And Technology Agency
• Original Assignee: Japan Science And Technology Agency, Regents of the University of California (University of California)
• Inventors: Speck, James S., Baker, Troy J., DenBaars, Steven P., Haskell, Benjamin A., Nakamura, Shuji, Fini, Paul T.
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US11/621,482
• Publication Number:
  US 20070111531A1
• Time in Patent Office: 1,204 Days
• Field of Search: 438/46, 438/47, 438/479, 438/938, 257/E21.113, 257/E21.463, 148/33
• US Class Current: 148/33
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: Y10S 438/938 Lattice strain control or utilization

Abstract

A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate'"'"'s surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.

Claims

1. A method for growing a nitride film, comprising growing a semi-polar nitride film on a substrate.

2. The method of claim 1, wherein the semi-polar nitride film is grown parallel to the substrate'"'"'s surface.

3. The method of claim 2, wherein the substrate is a miscut substrate.

8. The method of claim 1, wherein the semi-polar nitride film is grown on a semi-polar plane of the substrate.

9. The method of claim 1, wherein the semi-polar nitride film is {10-13} gallium nitride (GaN) and the substrate is a semi-polar substrate.

10. The method of claim 1, wherein the semi-polar nitride film is {10-11} gallium nitride (GaN) and the substrate is a semi-polar substrate.

11. The method of claim 1, wherein the semi-polar nitride film is {11-22} gallium nitride (GaN) and the substrate is a semi-polar substrate.

12. The method of claim 1, wherein the semi-polar nitride film is a planar semi-polar nitride film.

17. The method of claim 3, wherein the planar, semi-polar nitride film is a {20-21} or {10-14} nitride film.

18. The method of claim 3, wherein device layers are grown on the planar, semipolar nitride film by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

19. The method of claim 18, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).

20. The method of claim 3, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).

21. The method of claim 3, wherein the substrate is a {100} substrate miscut in specific directions.

22. The method of claim 21, wherein the specific directions comprise <

001>

, <

010>

or <

011>

.

4. A semi-polar nitride film grown on a substrate.

5. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is a planar, semi-polar nitride film.

6. The semi-polar nitride film of claim 5, wherein the planar, semi-polar nitride film is grown parallel to the substrate'"'"'s surface.

7. The semi-polar nitride film of claim 6, wherein the substrate is a miscut substrate.

13. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is grown on a semi-polar plane of the substrate.

14. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {10-13} gallium nitride (GaN) and the substrate is a semi-polar substrate.

15. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {10-11} gallium nitride (GaN) and the substrate is a semi-polar substrate.

16. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {11-22} gallium nitride (GaN) and the substrate is a semi-polar substrate.

23. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is comprised of a plurality of nitride layers.

24. The semi-polar nitride film of claim 6, wherein the planar, semi-polar nitride film is a {20-21} or {10-14} nitride film.

25. The semi-polar nitride film of claim 6, wherein device layers are grown on the planar, semipolar nitride film by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

26. The semi-polar nitride film of claim 25, wherein the planar, semi-polar nitrid film is grown on the substrate by hydride vapor phase epitaxy (HVPE).

27. The semi-polar nitride film of claim 6, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).

28. The semi-polar nitride film of claim 6, wherein the substrate is a {100} substrate miscut in specific directions.

29. The semi-polar nitride film of claim 28, wherein the specific directions comprise <

001>

, <

010>

or <

011>

.

30. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is comprised of a plurality of nitride layers.