Method of making light emitting diode with irregular surface and independent valleys
First Claim
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1. A method of making a light-emitting diode (LED), comprising:
- providing a semiconductor layer of a first polarity;
forming an active layer on the semiconductor layer of the first polarity; and
forming a semiconductor layer of a second polarity on the active layer,wherein at least one side of a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity comprises an irregular surface, and the irregular surface comprises a deformed dimension greater than an emitting wavelength of the LED for making light emitted from the active layer outside the LED, andwherein a plurality of independent valleys extend from an upper surface of the semiconductor layer of the second polarity to the active layer.
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Abstract
A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.
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Citations
27 Claims
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1. A method of making a light-emitting diode (LED), comprising:
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providing a semiconductor layer of a first polarity; forming an active layer on the semiconductor layer of the first polarity; and forming a semiconductor layer of a second polarity on the active layer, wherein at least one side of a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity comprises an irregular surface, and the irregular surface comprises a deformed dimension greater than an emitting wavelength of the LED for making light emitted from the active layer outside the LED, and wherein a plurality of independent valleys extend from an upper surface of the semiconductor layer of the second polarity to the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of making a LED, comprising:
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providing a semiconductor layer of a first polarity; forming an active layer on the semiconductor layer of the first polarity; and forming a semiconductor layer of a second polarity on the active layer, wherein at least one side of a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity comprises an irregular surface for making light emitted from the active layer outside the LED, and wherein a plurality of independent valleys penetrates the semiconductor layer of the second polarity. - View Dependent Claims (13, 14, 15, 27)
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16. A method of making a LED, comprising:
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providing a semiconductor layer of a first polarity; forming an active layer on the semiconductor layer of the first polarity; forming a semiconductor layer of a second polarity on the active layer; and forming a plurality of independent valleys in the semiconductor layer of the second polarity, wherein at least one side of a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity comprises an irregular surface, and the irregular surface comprises a deformed dimension greater than an emitting wavelength of the LED for making light emitted from the active layer outside the LED. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification