Fabrication of a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS)
First Claim
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1. A method of fabricating a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS) having a silicon layer and an oxide layer, the oxide layer being disposed on the silicon layer and having at least one metal layer disposed therein, the method comprising:
- etching the silicon layer of the CMOS to form a trench through the silicon layer to expose a portion of the oxide layer;
depositing a silicon oxide layer on the silicon layer and exposed portion of the oxide layer within the trench;
etching the silicon oxide layer deposited on the exposed portion of the oxide layer to expose a portion of the metal disposed within the oxide layer;
electrodepositing a conductor within the trench, the conductor extending through the trench to the exposed portion of the metal;
etching the silicon layer of the CMOS to remove portions of the silicon layer adjacent the conductor;
depositing a silicon dioxide layer over the silicon layer and the conductor; and
etching portions of the oxide layer adjacent the conductor to form at least one trench adjacent the conductor defined by sidewalls of the silicon layer on which a layer of oxide remains deposited.
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Abstract
Methods of fabricating micro-electromechanical system devices from complementary metal oxide semiconductors (CMOS) are provided.
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Citations
15 Claims
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1. A method of fabricating a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS) having a silicon layer and an oxide layer, the oxide layer being disposed on the silicon layer and having at least one metal layer disposed therein, the method comprising:
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etching the silicon layer of the CMOS to form a trench through the silicon layer to expose a portion of the oxide layer; depositing a silicon oxide layer on the silicon layer and exposed portion of the oxide layer within the trench; etching the silicon oxide layer deposited on the exposed portion of the oxide layer to expose a portion of the metal disposed within the oxide layer; electrodepositing a conductor within the trench, the conductor extending through the trench to the exposed portion of the metal; etching the silicon layer of the CMOS to remove portions of the silicon layer adjacent the conductor; depositing a silicon dioxide layer over the silicon layer and the conductor; and etching portions of the oxide layer adjacent the conductor to form at least one trench adjacent the conductor defined by sidewalls of the silicon layer on which a layer of oxide remains deposited. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 13, 14, 15)
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9. A method of fabricating a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS) having a silicon layer and an oxide layer, the oxide layer being disposed on the silicon layer and having a metal disposed therein, the method comprising:
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etching the silicon layer of the CMOS to form a trench through the silicon layer to expose a portion of the oxide layer; depositing a silicon oxide layer on the silicon layer and exposed portion of the oxide layer within the trench; etching the silicon oxide layer deposited on the exposed portion of the oxide layer to expose a portion of the metal disposed within the oxide layer; electrodepositing a conductor within the trench, the metal core extending through the trench to the exposed portion of the metal; etching the silicon layer of the CMOS to remove portions of the silicon layer adjacent the conductor; depositing a silicon dioxide layer over the silicon layer and the conductor; etching portions of the oxide layer adjacent the conductor to form at least one trench adjacent the conductor defined by sidewalls of the silicon layer on which a layer of oxide remains deposited; forming a dielectric layer over the silicon layer and the conductor; electrodepositing a permalloy within the at least one trench adjacent the conductor; etching the oxide layer to form a trench in a side of the oxide layer opposite the side in which the at least one trench adjacent the conductor is formed to form an opposing side trench; and electrodepositing in the opposing side trench a permalloy. - View Dependent Claims (10, 11, 12)
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Specification