×

Semiconductor processing methods

  • US 7,704,884 B2
  • Filed: 04/11/2008
  • Issued: 04/27/2010
  • Est. Priority Date: 04/11/2008
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor processing method, comprising:

  • forming a first layer of a composition across a front side of a semiconductor construction while forming a second layer of the composition across a back side of the semiconductor construction, where the back side is in opposing relation to the front side;

    forming a layer of insulative material over the first layer of the composition;

    etching a pattern of openings extending through the layer of insulative material and through the first layer of the composition;

    dipping the semiconductor construction in a plating bath to form conductive material within the openings; and

    wherein the forming the first and second layers of the composition comprises utilization of plasma-enhanced atomic layer deposition; and

    wherein the semiconductor construction remains in an orientation with the front side facing up during the recited utilization of the plasma-enhanced atomic layer deposition, formation of the layer of insulative material, and etching of the pattern of openings.

View all claims
  • 10 Assignments
Timeline View
Assignment View
    ×
    ×