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Thin-film transistor display devices having composite electrodes

  • US 7,705,355 B2
  • Filed: 08/09/2007
  • Issued: 04/27/2010
  • Est. Priority Date: 02/29/1996
  • Status: Expired due to Fees
First Claim
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1. A thin-film transistor display device, comprising:

  • a gate line and a gate electrode on a substrate;

    a first insulating layer on the gate line and gate electrode;

    a semiconductor layer on said first insulating layer;

    a data line including a source electrode and a drain electrode on said semiconductor layer, said data line and drain electrode comprising a first underlying refractory metal layer in contact with said semiconductor layer and a first metal layer on the first refractory metal layer;

    a second insulating layer directly contacting a portion of said semiconductor layer and having a contact hole therein that exposes the first refractory metal layer and side walls of the first metal layer;

    a pixel electrode on said second insulating layer, said pixel electrode extending into the contact hole and directly contacting the first refractory metal layer;

    a first conductive pattern electrically connected to an end portion of the gate line; and

    a second conductive pattern electrically connected to an end portion of the data line.

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