Thin film transistor with channel region in recess
First Claim
1. A semiconductor element comprising:
- a projection and a recess provided over an insulating surface, the projection provided in a linear-shaped stripe pattern and comprising an insulating material;
a first crystalline semiconductor region having a plurality of crystal orientations in the recess;
a second crystalline semiconductor region which is conductive and is provided over the projection and the recess, the first crystalline semiconductor region connected to the second crystalline semiconductor region,a channel region provided in the first crystalline semiconductor region; and
a gate electrode provided adjacent to the channel region with a gate insulating film therebetween, the gate electrode overlapping with the projection and the recess,wherein the first crystalline semiconductor region extends in a direction parallel to the linear-shaped stripe pattern, andwherein a portion of the gate insulating film is provided in contact with the projection.
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Accused Products
Abstract
A semiconductor element with high current drive capability, capable of high-speed operation, and having little variation in pluralities of semiconductor elements is provided. It is characterized by the fact that semiconductor elements have a first crystalline semiconductor region including pluralities of crystal orientations, and the first crystalline semiconductor region being connected to a second crystalline semiconductor region which is conductive, wherein the first crystalline semiconductor region is extended in the direction parallel to the insulating film which extends in linear-shaped stripe pattern on the insulating surface, and the second crystalline semiconductor region is provided ranging over the insulating film which extends in linear-shaped stripe pattern.
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Citations
24 Claims
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1. A semiconductor element comprising:
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a projection and a recess provided over an insulating surface, the projection provided in a linear-shaped stripe pattern and comprising an insulating material; a first crystalline semiconductor region having a plurality of crystal orientations in the recess; a second crystalline semiconductor region which is conductive and is provided over the projection and the recess, the first crystalline semiconductor region connected to the second crystalline semiconductor region, a channel region provided in the first crystalline semiconductor region; and a gate electrode provided adjacent to the channel region with a gate insulating film therebetween, the gate electrode overlapping with the projection and the recess, wherein the first crystalline semiconductor region extends in a direction parallel to the linear-shaped stripe pattern, and wherein a portion of the gate insulating film is provided in contact with the projection. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor element comprising:
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a projection and a recess provided over an insulating surface, the projection provided in a linear-shaped stripe pattern and comprising an insulating material; a first crystalline semiconductor region including a plurality of crystal orientations in the recess; a second crystalline semiconductor region which is conductive and is provided over the projection and the recess, the first crystalline semiconductor region connected to the second crystalline semiconductor region; a channel region provided in the first crystalline semiconductor region; and a gate electrode provided adjacent to the channel region with a gate insulating film therebetween, the gate electrode overlapping with the projection and the recess, wherein the first crystalline semiconductor region extends in a direction parallel to the linear-shaped stripe pattern, wherein the second crystalline semiconductor region is provided over the projection, wherein the second crystalline semiconductor region includes a portion thinner than the first crystalline semiconductor region, and wherein a portion of the gate insulating film is provided in contact with the projection. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor element comprising:
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a projection and a recess provided over an insulating surface, the projection provided in a linear-shaped stripe pattern and comprising an insulating material; a first crystalline semiconductor region including a plurality of crystal orientations in the recess; a second crystalline semiconductor region which is conductive and is provided over the projection and the recess, the first crystalline semiconductor region connected to the second crystalline semiconductor region, a channel region provided in the first crystalline semiconductor region; and a gate electrode provided adjacent to the channel region with a gate insulating film therebetween, the gate electrode overlapping with the projection and the recess, wherein the first crystalline semiconductor region extends in a direction parallel to the linear-shaped stripe pattern, wherein the second crystalline semiconductor region is used as a wiring, wherein the second crystalline semiconductor region includes a portion with a thinner film than that of the first crystalline semiconductor region, and wherein a portion of the gate insulating film is provided in contact with the projection. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A semiconductor element comprising:
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a projection and a recess provided over an insulating surface, the projection provided in a linear-shaped stripe pattern and comprising an insulating material; a crystalline semiconductor region having a plurality of crystal orientations in the recess; a channel region provided in the crystalline semiconductor region; and a gate electrode provided adjacent to the channel region with a gate insulating film therebetween, wherein the crystalline semiconductor region extends in a direction parallel to the linear-shaped stripe pattern, and wherein a portion of the gate insulating film is provided in contact with the projection. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification