Low voltage high-output-driving CMOS voltage reference with temperature compensation

• US 7,705,662 B2
• Filed: 09/25/2008
• Issued: 04/27/2010
• Est. Priority Date: 09/25/2008
• Status: Active Grant

• Current Assignee: Hong Kong Applied Science And Technology Research Institute Co., Ltd.
• Original Assignee: Hong Kong Applied Science And Technology Research Institute Co., Ltd.
• Inventors: Kwong, Kwok Kuen David, Ng, Chik Wai David
• Primary Examiner(s): Donovan; Lincoln
• Assistant Examiner(s): Hiltunen; Thomas J
• Application Number:
  US12/237,500
• Publication Number:
  US 20100073070A1
• Time in Patent Office: 579 Days
• Field of Search: 327/539, 327/513, 323313-314
• US Class Current: 327/539
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence

Abstract

A bandgap reference voltage generator has a first stage that generates a first current that is complementary-to-absolute-temperature (Ictat) and a second stage that generates a current that is proportional-to-absolute-temperature (Iptat). The Ictat and Iptat currents are both forced through a summing resistor to generate a voltage that is relatively independent of temperature, since the Ictat and Iptat currents cancel out each other'"'"'s temperature dependencies. A PMOS output transistor drives current to an output load to maintain the load at the reference voltage. An op amp drives the gate of the PMOS output transistor and has inputs connected to emitters of PNP transistors in the second stage. A series of resistors generate the reference voltage between the PMOS output transistor and ground and drives bases of the PNP transistors and includes the summing resistor. Parasitic PNP transistors in an all-CMOS process are used. The generator operates with a 1-volt power supply.

Claims

1. A temperature-compensated reference-voltage generator comprising:

a first stage that generates a complementary-to-absolute-temperature current that increases as temperature decreases;

a second stage that generates a proportional-to-absolute-temperature current that increases as temperature increases;

a summing resistor that receives both the complementary-to-absolute-temperature current from the first stage and the proportional-to-absolute-temperature current from the second stage, the summing resistor generating a summing voltage that is less dependent on temperature than either the complementary-to-absolute-temperature current or the proportional-to-absolute-temperature current;

a final voltage divider, in the second stage, that generates a reference voltage that includes the summing voltage;

an output transistor, coupled to the final voltage divider, for driving current to an output node, the output node being a node between the output transistor and the final voltage divider, the output node being driven by the output transistor to maintain the reference voltage on the output node; and

a final op amp having an output that drives a gate of the output transistor, the final op amp having a first input connected to a first sensing node in the second stage, and a second input connected to a second sensing node in the second stage;

wherein the first stage further comprises;

a first reference transistor that generates a first reference voltage that is complementary-to-absolute-temperature;

a first voltage divider coupled to the first reference voltage and generating a first compare voltage;

a first op amp that receives the first compare voltage and generates a bias voltage; and

a ctat current mirror transistor that receives the bias voltage from the first op amp, and generates the complementary-to-absolute-temperature current applied to the summing resistor, wherein the ctat current minor transistor is connected to the summing resistor;

a first current minor transistor that receives the bias voltage from the first op amp and generates a first current;

wherein the first current minor transistor is coupled to the first reference transistor and to the first voltage divider;

a second current minor transistor that receives the bias voltage from the first op amp and generates a second current;

a compare resistor that receives the second current and generates a second compare voltage that is applied to the first op amp, the first op amp comparing the first compare voltage to the second compare voltage to generate the bias voltage;

wherein the first reference transistor is a bipolar transistor having a base and a collector tied together and an emitter connected to the first reference transistor and to the first voltage divider;

wherein an emitter voltage of the first reference transistor is a voltage that falls with increasing absolute temperature,

whereby the reference voltage includes the summing voltage that sums the complementary-to-absolute-temperature and proportional-to-absolute-temperature currents.

2. The temperature-compensated reference-voltage generator of claim 1 wherein the second stage further comprises:

a first sensing transistor coupled to the first sensing node and having a base connected to a first intermediate node in the final voltage divider;

a second sensing transistor coupled to the second sensing node and having a base connected to a base node between the final voltage divider and the summing resistor;

wherein the final voltage divider comprises a first final resistor coupled between the output node and the first intermediate node, and a second final resistor coupled between the first intermediate node and the base node;

wherein the final voltage divider generates the proportional-to-absolute-temperature current applied to the summing resistor.

3. The temperature-compensated reference-voltage generator of claim 2 wherein the second stage further comprises:

a first sensing current minor transistor that receives the bias voltage from the first op amp and is connected to drive current to the first sensing node; and

a second sensing current minor transistor that receives the bias voltage from the first op amp and is connected to drive current to the second sensing node.

4. The temperature-compensated reference-voltage generator of claim 3 wherein the first reference transistor, the first sensing transistor, and the second sensing transistor are parasitic PNP transistors in a complementary metal-oxide-semiconductor (CMOS) process.

5. The temperature-compensated reference-voltage generator of claim 4 wherein the first current minor transistor, the second current minor transistor, the ctat current mirror transistor, the first sensing current mirror transistor, and the second sensing current mirror transistor are p-channel transistors having sources connected to a power supply of less than 2 volts, and gates connected to the bias voltage generated by the first op amp.

6. The temperature-compensated reference-voltage generator of claim 5 wherein the collector and base of the first reference transistor, and lower terminals of the first voltage divider and the compare resistor are grounded;

wherein the collector of the first sensing transistor, the collector of the second sensing transistor, and a lower terminal of the summing resistor are grounded.

7. The temperature-compensated reference-voltage generator of claim 6 wherein the power supply has a voltage of 1.0 volt.

8. The temperature-compensated reference-voltage generator of claim 2 further comprising:

a coupling capacitor coupled to the gate of the output transistor that is driven by the final op amp, the coupling capacitor having a capacitance size selected for dominant pole compensation to produce a stable total loop gain.

9. The temperature-compensated reference-voltage generator of claim 2 wherein the output transistor is a p-channel transistor having a source connected to a power supply and a drain connected to the output node and a gate driven by the final op amp.

10. The temperature-compensated reference-voltage generator of claim 2 wherein the output transistor is an n-channel transistor having a drain connected to a power supply and a source connected to the output node and a gate driven by the final op amp,

wherein the output transistor is a source-follower.

11. A voltage generator comprising:

a first bipolar transistor connected to a first node;

a first current minor transistor connected to the first node, and having a gate receiving a bias voltage;

a first resistor connected between the first node and a first compare node;

a second resistor connected to the first compare node;

a second current minor transistor connected to a second node, and having a gate receiving the bias voltage;

a third resistor connected to the second node;

a first op amp receiving the first node and the second node as inputs, and generating the bias voltage as an output;

a third current minor transistor connected to a summing node, and having a gate receiving the bias voltage;

a summing resistor connected to the summing node;

a first current transistor connected to a first sensing node;

a first sensing bipolar transistor having a first terminal connected to the first sensing node, and a base terminal connected to a first base node;

a second current transistor connected to a second sensing node;

a second sensing bipolar transistor having a first terminal connected to the second sensing node, and a base terminal connected to the summing node;

a second op amp receiving the first sensing node and the second sensing node as inputs, and generating a feedback voltage as an output;

an output transistor having a gate receiving the feedback voltage from the second op amp, and connected to an output node;

a fourth resistor coupled between the output node and the first base node; and

a fifth resistor coupled between the first base node and the summing node,

wherein the output node has a reference voltage that is generated by the voltage generator.

12. The voltage generator of claim 11 wherein the first bipolar transistor comprises a PNP transistor that has a collector and a base connected to a ground and wherein the first node is connected to an emitter of the first bipolar transistor;

wherein the first sensing bipolar transistor comprises a PNP transistor that has a collector connected to the ground and an emitter connected to the first sensing node;

wherein the second sensing bipolar transistor comprises a PNP transistor that has a collector connected to the ground and an emitter connected to the second sensing node;

wherein the second resistor has a terminal connected to the ground;

wherein the third resistor has a terminal connected to the ground;

wherein the summing resistor has a terminal connected to the ground.

13. The voltage generator of claim 12 wherein the output transistor is a p-channel transistor having a source connected to a power supply.

14. The voltage generator of claim 12 wherein the output transistor is an n-channel transistor having a source connected to the output node and a drain connected to a power supply.

15. The voltage generator of claim 13 wherein the first current minor transistor comprises a p-channel transistor having a source connected to a power supply;

wherein the second current minor transistor comprises a p-channel transistor having a source connected to the power supply;

wherein the third current minor transistor comprises a p-channel transistor having a source connected to the power supply;

wherein the first current transistor comprises a p-channel transistor having a source connected to the power supply;

wherein the second current transistor comprises a p-channel transistor having a source connected to the power supply,

wherein the power supply is less than 2.0 volts.

16. The voltage generator of claim 15 wherein the first current transistor has a gate receiving the bias voltage;

wherein the second current transistor has a gate receiving the bias voltage.

17. A compensating voltage generator circuit comprising:

first stage means for generating a complementary-to-absolute-temperature current that increases as temperature decreases;

second stage means for generating a proportional-to-absolute-temperature current that increases as temperature increases;

summing resistor means, receiving both the complementary-to-absolute-temperature current from the first stage means and the proportional-to-absolute-temperature current from the second stage means, for generating a summing voltage that is less dependent on temperature than either the complementary-to-absolute-temperature current or the proportional-to-absolute-temperature current;

final voltage divider means for generating a reference voltage that includes the summing voltage;

output transistor means, coupled to the final voltage divider means, for driving current to an output node, the output node being a node between the output transistor means and the final voltage divider means, the output node being driven by the output transistor means to maintain the reference voltage on the output node;

final operational amplifier means for driving a gate of the output transistor means, the final operational amplifier means having a first input connected to a first sensing node in the second stage means, and a second input connected to a second sensing node in the second stage means;

first reference transistor means for generating a first reference voltage that is complementary-to-absolute-temperature;

first voltage divider means, coupled to the first reference voltage, for generating a first compare voltage;

first operational amplifier means, receiving the first compare voltage, for generating a bias voltage;

ctat current minor transistor means, receiving the bias voltage, for generating the complementary-to-absolute-temperature current applied to the summing resistor means, wherein the ctat current minor transistor means is connected to the summing resistor means;

first sensing transistor means for generating a first sensing voltage on the first sensing node in response to a base connected to a first intermediate node in the final voltage divider means;

second sensing transistor means for generating a second sensing voltage on the second sensing node in response to a base connected to a base node between the final voltage divider means and the summing resistor means;

whereby the reference voltage includes the summing voltage that sums the complementary-to-absolute-temperature and proportional-to-absolute-temperature currents.