Method of determining substrate etch depth

• US 7,705,995 B1
• Filed: 06/15/2005
• Issued: 04/27/2010
• Est. Priority Date: 12/20/2004
• Status: Active Grant

• Current Assignee: J.A. Woollam Co., Inc.
• Original Assignee: J.A. Woollam Co., Inc.
• Inventors: Hale, Jeffrey S., Johs, Blaine D.
• Primary Examiner(s): Lyons; Michael A
• Application Number:
  US11/153,052
• Time in Patent Office: 1,777 Days
• Field of Search: 356/369, 356/450, 356/497, 356/498, 356/503, 356/504
• US Class Current: 356/504
• CPC Class Codes: G01B 11/22 for measuring depth

Abstract

A method of monitoring, in real time, the depth to which a process sample is etched by an etching procedure involving investigating a sample substrate that has a patterned surface which, when electromagnetic radiation in an appropriate wavelength range is caused to reflect from, demonstrates lateral interference effects, such that when a frequency transform is applied to spectroscopic reflection data, three distinguishable peaks occur, at least for some range of pattern depth in the sample surface.

Claims

1. A method of determining etch depth in a process sample made of a sample material, comprising the steps of:

a) placing a process sample and a witness sample into a chamber for performing sample etching, said witness sample comprising a surface with a patterned layer present thereupon of a material different from the sample material which is common to both said process sample and witness sample, said witness sample material being directly accessible where the material of the patterned layer is removed to form said pattern;

b) causing a beam of electromagnetic radiation to reflect from said witness sample while etching of said process sample and witness sample is being performed, such that a plot of reflectance or an ellipsometric parameter vs. photon energy or wavelength or wavenumber or mathematical equivalent is effectively produced, said plot demonstrating interference between electromagnetic radiation rays which reflect from the surface of the patterned layer and from the witness sample material;

c) performing a frequency domain transform of said plot obtained in step b with the result of said frequency domain transform being that at least three identifiable frequency domain peaks result, one of said peaks being proportional to the depth of the patterned layer material, the second of said peaks being proportional to the depth of the atmosphere in the region of the patterned layer which is removed to provide access to said witness sample material including the witness sample etch depth, and the third peak being located at a position determined by the difference between the positions of the first and second peaks along the photon energy or wavelength or wavenumber or mathematical equivalent axis;

d) using said frequency domain transform plot to perform a mathematical calculation which quantifies etching of the witness sample material; and

e) accepting the results obtained in step d only if said third peak is present at the appropriate position.

2. A method as in claim 1 in which the step of performing a frequency domain transform is preceded by determining an average value of said plot and subtracting said average value from the plot such that the plot oscillates substantially about 0.0.

3. A method as in claim 1, in which the material of the patterned layer present upon said witness sample is photoresist.

4. A method as in claim 1 in which the pattern in the patterned material on the surface of the witness sample is a plurality of 10 micron lines separated by 10 micron spaces.

5. A method as in claim 1 in which the frequency domain transform is a LOMB transform.

6. A method as in claim 1 in which the frequency domain transform is a Fourier transform.

7. A method of determining etch depth in a process sample made of a sample material, comprising the steps of:

a) placing a process sample into a chamber for performing sample etching, said process sample comprising a surface with a patterned layer present thereupon of a material different from the sample material, said process sample material being directly accessible where the material of the patterned layer is removed to form said pattern;

b) causing a beam of electromagnetic radiation to reflect from said process sample while etching thereof is being performed, such that a plot of reflectance or an ellipsometric parameter vs. photon energy or wavelength or wavenumber or mathematical equivalent is effectively produced, said plot demonstrating interference between electromagnetic radiation rays which reflect from the surface of the patterned layer and from the process sample material;

c) performing a frequency domain transform of said plot obtained in step b with the result of said frequency domain transform being that at least three identifiable frequency domain peaks result, one of said peaks being proportional to the depth of the patterned layer material, the second of said peaks being proportional to the depth of the atmosphere in the region of the patterned layer which is removed to provide access to said process sample material including the process sample etch depth, and the third peak being located at a position determined by the difference between the positions of the first and second peaks along the photon energy or wavelength or wavenumber or mathematical equivalent axis;

d) using said frequency domain transform plot to perform a mathematical calculation which quantifies etching of the process sample material; and

e) accepting the results obtained in step d only if said third peak is present at the appropriate position.

8. A method as in claim 7 in which the step of performing a frequency domain transform is preceded by determining an average value of said plot and subtracting said average value from the plot such that the plot oscillates substantially about 0.0.

9. A method as in claim 7, in which the material of the patterned layer present upon said process sample is photoresist.

10. A method as in claim 7 in which the pattern in the patterned material on the surface of the process sample is a plurality of 10 micron lines separated by 10 micron spaces.

11. A method as in claim 7 in which the frequency domain transform is a LOMB transform.

12. A method as in claim 7 in which the frequency domain transform is a Fourier transform.