RF power module

• US 7,706,756 B2
• Filed: 01/24/2007
• Issued: 04/27/2010
• Est. Priority Date: 02/28/2006
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Kuroda, Naoki, Moriyama, Shinji, Sato, Yusuke, Sato, Ryota, Maejima, Nobuyoshi, Okano, Masashi, Kudaishi, Tomoaki
• Primary Examiner(s): Nguyen; Lee
• Application Number:
  US11/626,485
• Publication Number:
  US 20070210866A1
• Time in Patent Office: 1,189 Days
• Field of Search: 455/78, 455/83, 455/127.4, 333100-101, 333/124
• US Class Current: 455/78
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 2924/30111 matching
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H03F 2200/111 : the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2200/294 : the amplifier being a low noise amplifier [LNA]
• CPC Class Codes: H03F 2200/451 : the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 3/195 : in integrated circuits
• CPC Class Codes: H03F 3/68 : Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602
• CPC Class Codes: H03F 3/72 : Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal

Abstract

A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.

Claims

1. An electronic device including a power amplifier circuit and a switch circuit to which an output of the power amplifier circuit is connected, the electronic device comprising:

a wiring board;

a first semiconductor chip mounted over a main surface of the wiring board, the first semiconductor chip including a MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed therein for constituting the power amplifier circuit; and

a second semiconductor chip mounted over the main surface of the wiring board for constituting the switch circuit,

wherein low pass filter circuits of the first and second systems are formed of first and second integrated passive elements mounted over the main surface of the wiring board, respectively,

wherein the electronic device comprises the power amplifier circuits of first and second systems, the switch circuits of the first and second systems electrically connected to the outputs of the power amplifier circuits of the first and second systems, respectively, and the low pass filter circuits of the first and second systems electrically connected between the power amplifier circuits of the first and second systems and the switch circuits of the first and second systems, respectively,

wherein the MISFETs constituting the power amplifier circuits of the first and second systems are formed in the first semiconductor chip,

wherein the switch circuits of the first and second systems are formed in the second semiconductor chip, and

wherein electrical connections are established between the first integrated passive element and the second semiconductor chip, and between the second integrated passive element and the second semiconductor chip over the main surface of the wiring board via the conductive pattern of the wiring board or via the conductive pattern and the bonding wire without via the passive component.

2. The electronic device according to claim 1, wherein the first semiconductor chip further includes a control circuit for the switch circuit.

3. The electronic device according to claim 1, wherein the second semiconductor chip includes a HEMT (High Electron Mobility Transistor) or a diode formed therein for constituting the switch circuit.

4. The electronic device according to claim 1, wherein the electronic device is mounted over a mobile communication device.

5. The electronic device according to claim 4, wherein the switch circuit is a switch circuit serving as an antenna switch circuit for the mobile communication device.

6. The electronic device according to claim 1,

wherein a transmission frequency band of the power amplifier circuit of the first system is the 0.9 GHz band, and

wherein a transmission frequency band of the power amplifier circuit of the second system is the 1.8 GHz band.

7. The electronic device according to claim 1,

wherein the second semiconductor chip is disposed between the first integrated passive element and the second integrated passive element over the main surface of the wiring board.

8. The electronic device according to claim 1,

wherein the second semiconductor chip is disposed next to the first semiconductor chip over the main surface of the wiring board.

9. The electronic device according to claim 8, wherein the first semiconductor chip further comprises a control circuit for the switch circuit,

wherein the first semiconductor chip and the second semiconductor chip are electrically connected to each other via a conductive pattern of the wiring board or via the conductive pattern and a bonding wire over the main surface of the wiring board, and

wherein a control signal of the switch circuit is supplied from the first semiconductor chip to the second semiconductor chip.

10. An electronic device including a power amplifier circuit and a switch circuit to which an output of the power amplifier circuit is connected, the electronic device comprising:

a wiring board;

a first semiconductor chip mounted over a main surface of the wiring board, the first semiconductor chip including a MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed therein for constituting the power amplifier circuit; and

a second semiconductor chip mounted over the main surface of the wiring board for constituting the switch circuit,

wherein low pass filter circuits of the first and second systems are formed of first and second integrated passive elements mounted over the main surface of the wiring board, respectively,

wherein the electronic device comprises the power amplifier circuits of first and second systems, the switch circuits of the first and second systems electrically connected to the outputs of the power amplifier circuits of the first and second systems, respectively, and the low pass filter circuits of the first and second systems electrically connected between the power amplifier circuits of the first and second systems and the switch circuits of the first and second systems, respectively,

wherein the MISFETs constituting the power amplifier circuits of the first and second systems are formed in the first semiconductor chip,

wherein the switch circuits of the first and second systems are formed in the second semiconductor chip, and

wherein a plurality of first electrodes of the first semiconductor chip and a plurality of second electrodes of the wiring board are electrically connected to each other via a plurality of bonding wires over the main surface of the wiring board, and

wherein each of the plurality of bonding wires is prevented from passing through and on another second electrode having a potential different from that of the second electrode connected.

11. The electronic device according to claim 10, wherein the plurality of second electrodes are arranged in line around the first semiconductor chip over the main surface of the wiring board.

12. The electronic device according to claim 11, wherein the first semiconductor chip further includes a control circuit for the switch circuit formed therein.

13. An electronic device including a power amplifier circuit and a low pass filter circuit electrically connected to the power amplifier circuit, the electronic device comprising:

a wiring board;

a first semiconductor chip mounted over a main surface of the wiring board for constituting the power amplifier circuit; and

an integrated passive element mounted over the main surface of the wiring board for constituting the low pass filter circuit,

wherein a pattern for identifying a position of the integrated passive element is formed over the main surface of the wiring board, and

wherein the pattern for identifying the position of the integrated passive element is formed of the same conductive layer as that of a plurality of first electrodes disposed over the main surface of the wiring board and electrically connected to a plurality of second electrodes of the integrated passive element.

14. An electronic device including a power amplifier circuit and a low pass filter circuit electrically connected to the power amplifier circuit, the electronic device comprising:

a wiring board;

a first semiconductor chip mounted over a main surface of the wiring board for constituting the power amplifier circuit; and

an integrated passive element mounted over the main surface of the wiring board for constituting the low pass filter circuit,

wherein a pattern for identifying a position of the integrated passive element is formed over the main surface of the wiring board,

wherein the pattern for identifying the position of the integrated passive element is provided at least in a part around the integrated passive element over the main surface of the wiring board, and

wherein the integrated passive element does not exist directly above at least one part of the pattern for identifying the position of the integrated passive element.