Method for deposition of magnesium doped (Al, In, Ga, B)N layers
First Claim
Patent Images
1. A method for growing an improved quality device, comprising:
- (a) depositing one or more Indium (In) containing nitride-based quantum well layers at a growth temperature; and
(b) depositing a nitride semiconductor film on the quantum well layers at a growth substrate temperature no greater than 150°
C. above the growth temperature of the Indium containing nitride-based quantum well layers, wherein the growth substrate temperature reduces thermal damage to the quantum well layers and the nitride semiconductor film has a thickness greater than 50 nm.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for growing an improved quality device by depositing a low temperature (LT) magnesium (Mg) doped nitride semiconductor thin film. The low temperature Mg doped nitride semiconductor thin film may have a thickness greater than 50 nm. A multi quantum well (MQW) active layer may be grown at a growth temperature and the LT Mg doped nitride semiconductor thin film may deposited on the MQW active layer at a substrate temperature no greater than 150° C. above the growth temperature.
166 Citations
20 Claims
-
1. A method for growing an improved quality device, comprising:
-
(a) depositing one or more Indium (In) containing nitride-based quantum well layers at a growth temperature; and (b) depositing a nitride semiconductor film on the quantum well layers at a growth substrate temperature no greater than 150°
C. above the growth temperature of the Indium containing nitride-based quantum well layers, wherein the growth substrate temperature reduces thermal damage to the quantum well layers and the nitride semiconductor film has a thickness greater than 50 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A light emitting diode (LED), comprising:
-
(a) one or more Indium (In) containing nitride-based quantum well layers; (b) an n-type layer deposited on one side of the Indium containing nitride-based quantum well layers for injecting n-type carriers into the Indium containing nitride-based quantum well layers; and (c) a nitride semiconductor layer, containing Magnesium (Mg), deposited on the Indium containing nitride-based quantum well layers for acting as a p-type layer, wherein the nitride semiconductor layer has a thickness of at least 50 nm and the nitride semiconductor layer is deposited at a growth substrate temperature no greater than 150°
C. above a growth temperature of the Indium containing nitride-based quantum well layers to reduce thermal damage to the quantum well layers. - View Dependent Claims (15, 16, 17, 18, 19, 20)
-
Specification