Method and apparatus for processing thin metal layers

• US 7,709,378 B2
• Filed: 08/10/2006
• Issued: 05/04/2010
• Est. Priority Date: 10/10/2000
• Status: Expired due to Fees

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: Im, James S.
• Primary Examiner(s): NGUYEN, KIET TUAN
• Application Number:
  US11/502,056
• Publication Number:
  US 20090140173A1
• Time in Patent Office: 1,363 Days
• Field of Search: 438/660, 438/661, 438/662, 438/686, 438/687, 438/688, 438/795, 438/798, 438/799, 438/940, 438/955, 257/45, 257/75, 250/492.1, 250/492.2
• US Class Current: 438/660
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76894 using a laser, e.g. laser cutting, laser direct writing, laser repair
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: Y10S 438/94 Laser ablative material removal
• CPC Class Codes: Y10S 438/955 Melt-back

Abstract

A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern defined by a mask to have shadow regions and beamlets. Each region of the metal layer overlapped by a beamlet is melted throughout its entire thickness, and each region of the metal layer overlapped by a shadow region remains at least partially unmelted. After completion of resolidification of the melted regions following irradiation by the first excimer laser pulse, the metal layer is irradiated by a second excimer laser pulse having a shifted intensity pattern so that the shadow regions overlap regions of the metal layer having fewer and larger grains.

Claims

1. An apparatus for processing a thin metal layer disposed on a substrate comprising:

(a) a pulsed radiation beam source configured to provide radiation beam pulses of sufficient strength to melt the thin metal layer throughout its entire thickness;

(b) a beam mask configured to define, upon incidence of the radiation beam pulses, a respective intensity pattern of each one of the radiation beam pulses for irradiating at least a portion of the metal layer, the intensity pattern having at least one strip comprising of one or more shadow regions, having a width, and at least one strip comprising of one or more beamlets, having a width,

wherein the beam mask is further configured such that during irradiation by a radiation beam pulse, each region of the at least a portion of the metal layer is overlapped by a respective one of the at least one strip comprising of one or more beamlets, and each region of the at least a portion of the metal layer is overlapped by a respective one of the at least one strip comprising of one or more shadow regions,

and wherein the width of the at least one strip comprising of one or more shadow regions is less than the width of the at least one strip comprising of one or more beamlets;

(c) a sample translation stage configured to hold the metal layer on the substrate while the at least a portion of the metal layer is being irradiated by the radiation beam pulses, and configured to translate the metal layer on the substrate in a lateral direction with respect to the radiation beam pulses; and

wherein the sample translation stage is further configured to microtranslate the substrate having the metal layer in a lateral direction with respect to the radiation beam pulses so as to shift the intensity pattern of the radiation beam pulses with respect to the metal layer from one radiation beam pulse to another.

2. The apparatus of claim 1, wherein the pulsed radiation beam source is a pulsed laser.

3. The apparatus of claim 2, wherein the pulsed radiation beam source is a pulsed excimer laser.

4. The apparatus of claim 2, wherein there is included a first optical path traversed by the radiation beam pulses from the pulsed laser to the beam mask.

5. The apparatus of claim 4, wherein the first optical path includes beam expanding and collimating lenses, a field lens and at least one beam steering mirror.

6. The apparatus of claim 5, wherein the first optical path further includes a beam homogenizer and a condenser lens.

7. The apparatus of claim 6, wherein the first optical path further includes a controllable beam attenuator.

8. The apparatus of claim 2, further comprising a second optical path traversed by the laser beam pulses from the beam mask to the metal layer on the substrate on the sample translation stage.

9. The apparatus of claim 8, wherein the second optical path includes an objective lens and at least one beam steering mirror.

10. The apparatus of claim 8, wherein the second optical path further includes a controllable shutter.

11. The apparatus of claim 10, further comprising a computer for controlling the pulsed laser, the controllable shutter and the sample translation stage.

12. The apparatus of claim 1, wherein the pulsed radiation beam source is a chopped continuous wave laser.

13. The apparatus of claim 1, wherein the pulsed radiation beam source is a pulsed electron beam source.

14. The apparatus of claim 1, wherein the pulsed radiation beam source is a pulsed ion beam source.

15. The apparatus of claim 1, wherein the beam mask is a projection mask.

16. The apparatus of claim 1, wherein the beam mask is a proximity mask.

17. The apparatus of claim 1, wherein the beam mask is a contact mask.

18. The apparatus of claim 1, further comprising a mask translation stage for holding the beam mask and for translating the beam mask in a lateral direction with respect to the radiation beam pulses so as to shift the intensity pattern of the radiation beam pulses with respect to the metal layer from one radiation beam pulse to another.

19. The apparatus of claim 18, further comprising a computer for controlling the pulse radiation beam source and the mask translation stage.

20. The apparatus of claim 1, wherein each of the at least one strip comprising of one or more shadow regions is a linear, stripe-like shadow region and each of the atleast one strip comprising of one or more beamlets is a linear, stripe-like beamlet.

21. The apparatus of claim 20, wherein the beam mask is further configured such that the intensity pattern has at least two linear, stripe-like shadow regions and at least two linear, stripe-like beamlets, and

wherein at least one of the linear, stripe-like shadow regions is oriented at an angle with respect to another and at least one of the linear, stripe-like beamlets is oriented at an angle with respect to another.

22. The apparatus of claim 21, wherein the angle of orientation between the at least two linear, stripe-like shadow regions and between the at least two linear, stripe-like beamlets is a right angle.

23. The apparatus of claim 1, wherein each of the at least one strip comprising of one or more shadow regions is a strip comprising of dot-like shadow regions and each of the at least one strip comprising of one or more beamlets is a linear, stripe-like beamlet which surrounds and abuts the strip comprising of dot-like shadow regions.

24. The apparatus of claim 23, wherein the beam mask is further configured such that the intensity pattern has at least two strips of dot-like shadow regions and at least two linear, stripe-like beamlets, each surrounding and abutting a respective strip comprising of dot-like shadow regions, and

wherein at least one of the strips of dot-like shadow regions is oriented at an angle with respect to another and at least one of the linear, stripe-like beamlets is oriented at an angle with respect to another.

25. The apparatus of claim 24, wherein the angle of orientation between the at least two strips of dot-like shadow regions and between the at least two linear, stripe-like beamlets is a right angle.

26. An apparatus for processing a thin metal layer disposed on a substrate comprising:

(a) a pulsed radiation beam source configured to provide radiation beam pulses of sufficient strength to melt the thin metal layer throughout its entire thickness;

(b) a beam mask configured to define, upon incidence of the radiation beam pulses, a respective intensity pattern of each one of the radiation beam pulses for irradiating at least a portion of the metal layer, the intensity pattern having at least two adjacent sawtooth shaped beamlets, each having at least one upward pointing apex and at least one downward pointing apex, and at least one shadow region between and adjoining the at least two adjacent sawtooth shaped beamlets,

wherein the beam mask is further configured such that during irradiation by a radiation beam pulse, each region of the at least a portion of the metal layer is overlapped by a respective one of the at least two sawtooth shaped beamlets, and each region of the at least a portion of the metal layer is overlapped by a respective one of the at least one shadow region,

and wherein the at least two adjacent sawtooth shaped beamlets are staggered with respect each other such that the at least one upward pointing apex of each of the at least two adjacent sawtooth shaped beamlets is out of alignment with respect to the at least one upward pointing apex of another of the at least two adjacent sawtooth shaped beamlets;

(c) a sample translation stage configured to hold the metal layer on the substrate while the at least a portion of the metal layer is being irradiated by the radiation beam pulses, and configured to translate the metal layer on the substrate in a lateral direction with respect to the radiation beam pulses; and

wherein the sample translation stage is further configured to microtranslate the substrate having the metal layer in a lateral direction with respect to the radiation beam pulses so as to shift the intensity pattern of the radiation beam pulses with respect to the metal layer from one radiation beam pulse to another.

27. The apparatus of claim 26, wherein the at least two adjacent sawtooth shaped beamlets are staggered with respect each other such that the at least one upward pointing apex of each of the at least two adjacent sawtooth shaped beamlets is aligned with the at least one downward pointing apex of another of the at least two adjacent sawtooth shaped beamlets.