Substrate for an organic field effect transistor, use of said substrate, method of increasing the charge carrier mobility, and organic field effect transistor (OFET)

• US 7,709,865 B2
• Filed: 06/06/2003
• Issued: 05/04/2010
• Est. Priority Date: 06/13/2002
• Status: Expired due to Fees

• Current Assignee: PolyIC GmbH & Co. KG (Leonhard KURZ Stiftung & Company KG)
• Original Assignee: PolyIC GmbH & Co. KG (Leonhard KURZ Stiftung & Company KG)
• Inventors: Rost, Henning, Clemens, Wolfgang
• Primary Examiner(s): Huynh; Andy
• Assistant Examiner(s): HO, HOANG QUAN TRAN
• Application Number:
  US10/517,750
• Publication Number:
  US 20050224787A1
• Time in Patent Office: 2,524 Days
• Field of Search: None
• US Class Current: 257/288
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 71/12 using liquid deposition, e.g. spin coating
• CPC Class Codes: H10K 99/00 Subject matter not provided for in other groups of this subclass

Abstract

An organic field effect transistor includes a well-ordered substrate layer on which organic functional material is deposited. A method of increasing the charge carrier mobility of the organic field effect transistor substrate layer is achieved by depositing onto the substrate an organic functional material, the substrate being in the form of a well-ordered layer. The method and transistor include using a well-ordered plastics film as the substrate layer.

Claims

1. In an electronic organic component, the combination comprising:

a substrate of the electronic organic component; and

an organic functional layer coated on the substrate;

wherein said substrate comprises a biaxially stretched (well-ordered) plastic film such that the orderliness of the plastic film forms the applied functional layer into a well-ordered layer to thereby improve electrical properties of the component.

2. In the electronic organic component as defined in claim 1, wherein the plastic film is at least partially crystalline.

3. In the electronic organic component as defined in any one of claims 1 or 2, wherein the plastic film is selected from any one of the group consisting of isotactic polypropylene, polyamide, polyethylene, or polyethylene terephthalate.

4. In the electronic organic component of any one of claims 1 or 2 wherein the component further comprises an organic field effect transistor (OFET) comprising the substrate and the functional layer forming a semiconductor layer coated on the substrate.

5. In an organic field effect transistor (OFET) the combination comprising the substrate and a semiconducting layer formed from the functional layer on and contiguous with the substrate according to claim 3.

6. The transistor of claim 4 wherein the electrical properties comprises an improved ON/OFF ratio of the transistor.

7. A method of improving electrical properties of a functional layer of organic material, wherein the functional layer is formed on and contiguous with an underlayer comprising an oriented, biaxially stretched (well-ordered) plastic film, the electrical properties of the functional layer being improved by the contiguous well ordered biaxially stretched underlayer.

8. The structure of one of claims 1 or 7 wherein the structures form a transistor whose electrical properties comprises an improved transistor ON/OFF ratio.

9. In an organic field effect transistor (OFET) the combination comprising:

a substrate which comprises a biaxially stretched (well-ordered) plastic film; and

a semiconducting layer above and on that substrate contiguous therewith, the semiconductor layer exhibiting improved electrical properties.

10. An organic transistor comprising:

a substrate which comprises a biaxially stretched (well-ordered plastic film);

a semiconducting layer above and on that substrate contiguous therewith, the semiconductor layer exhibiting improved electrical properties;

source and drain electrodes on the substrate contiguous with the semiconductor layer;

an insulating layer on the semiconductor layer; and

a gate electrode on the insulating layer.

11. The transistor of claim 10 wherein the electrical properties comprise an improved ON/OFF ratio of the transistor.