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Semiconductor device

  • US 7,709,888 B2
  • Filed: 09/29/2005
  • Issued: 05/04/2010
  • Est. Priority Date: 09/29/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device having gate insulating films and gate electrodes in a plurality of trenches, respectively, formed in a semiconductor substrate,wherein at least a portion of an end of each of the trenches has a greater width than a portion of each said trench other than the end,each of the trenches comprises:

  • a gate electrode portion in which the gate electrode is arranged; and

    a gate lead portion for electrically connecting the gate electrode to the outside,the end is an end located in the gate lead portion,in the gate electrode portion, the trenches are arranged in a stripe pattern, andin two adjacent trenches of the trenches, their ends are arranged in different alignments across the direction in which the stripe pattern extends.

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