ESD protection device and method

• US 7,709,896 B2
• Filed: 03/08/2006
• Issued: 05/04/2010
• Est. Priority Date: 03/08/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG, International Business Machines Corporation
• Original Assignee: Infineon Technologies AG
• Inventors: Wendel, Martin, Schneider, Jens, Chatty, Kiran V., Gauthier, Robert, Alvarez, David, Russ, Cornelius Christian
• Primary Examiner(s): Bryant; Kiesha R
• Assistant Examiner(s): WRIGHT, TUCKER J
• Application Number:
  US11/370,369
• Publication Number:
  US 20070210387A1
• Time in Patent Office: 1,518 Days
• Field of Search: 257/499, 257355-362, 257/E27.06, 257/E29.255
• US Class Current: 257/355
• CPC Class Codes: H01L 29/0626 with a localised breakdown region, e.g. built-in avalanching region in self-protected thyristors H01L29/7424
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/1083 with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
• CPC Class Codes: H01L 29/1087 characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

An ESD protection device includes a source region, a channel region adjacent the source region, and an elongated drain region spaced from the source region by the channel region. The elongated drain region includes an unsilicided portion adjacent the channel and a silicided portion spaced from channel region by the unsilicided portion. A first ESD region is located beneath the silicided portion of the elongated drain region and a second ESD region is located beneath the unsilicided portion of the elongated drain region, the second ESD region being spaced from the first ESD region.

Claims

1. A semiconductor device comprising:

a semiconductor body of a first conductivity type;

a first highly doped region of a second conductivity type disposed at a surface of the semiconductor body, the second conductivity type different than the first conductivity type;

a second highly doped region of the second conductivity type disposed at the surface of the semiconductor body and laterally spaced from the first highly doped region by a region of the first conductivity type;

a contact overlying the first highly doped region and electrically coupled thereto;

a third doped region of the first conductivity type within the semiconductor body and spaced from the surface by the first highly doped region, the third doped region vertically underlying the contact;

a fourth doped region of the first conductivity type within the semiconductor body, spaced from the surface by the first highly doped region and laterally spaced from the third doped region by the semiconductor body, the fourth doped region adjacent a junction between the first highly doped region and the region of the first conductivity type, the fourth doped region not vertically underlying the contact; and

a gate overlying and insulated from the region of the first conductivity type.

2. The device of claim 1, wherein the first conductivity type comprises p-type and the second conductivity type comprises n-type.

3. The device of claim 1, wherein an upper surface of the first highly doped region includes a silicide region beneath the contact, wherein a remaining portion of the first highly doped region that extends toward the second highly doped region is not silicided.

4. The device of claim 1, wherein an upper surface of the first highly doped region includes a first silicide region beneath the contact and a second silicide region adjacent the gate, wherein a remaining portion of the first highly doped region that extends between the first silicide region and the second silicide region is not silicided.

5. The device of claim 1, wherein the third doped region vertically underlies the contact such that a vertical line perpendicular with a plane of the surface of the semiconductor body extending through a center point of the contact passes through the third doped region.

6. A semiconductor device comprising:

a semiconductor body of a first conductivity type;

a first highly doped region of a second conductivity type disposed at a surface of the semiconductor body, the second conductivity type different than the first conductivity type;

a second highly doped region of the second conductivity type disposed at the surface of the semiconductor body and laterally spaced from the first highly doped region by a region of the first conductivity type;

a contact overlying the first highly doped region and electrically coupled thereto;

a third doped region of the first conductivity type within the semiconductor body and spaced from the surface by the first highly doped region, the third doped region vertically underlying the contact;

a fourth doped region of the first conductivity type within the semiconductor body, spaced from the surface by the first highly doped region and laterally spaced from the third doped region by the semiconductor body, the fourth doped region adjacent a junction between the first highly doped region and the region of the first conductivity type;

a gate overlying and insulated from the region of the first conductivity type;

a fifth highly doped region of the first conductivity type disposed at the surface of the semiconductor body, the fifth highly doped region spaced from the first highly doped region by a first insulating region; and

a sixth highly doped region of the first conductivity type disposed at the surface of the semiconductor body, the sixth highly doped region spaced from the second highly doped region by a second insulating region.

7. The device of claim 6, wherein the gate, the second highly doped region, the fifth highly doped region and the sixth highly doped region are all coupled to a ground potential.

8. The device of claim 7, wherein the first highly doped region is coupled to an external input/output node.

9. The device of claim 7, wherein the first highly doped region is coupled to a reference voltage potential.

10. An ESD protection device comprising:

a ground potential node;

a source region coupled to ground potential node;

a channel region adjacent the source region;

an elongated drain region spaced from the source region by the channel region so that a single transistor including the source region, channel region and elongated drain region is formed, the elongated drain region including an unsilicided portion adjacent the channel region and a silicided portion spaced from the channel region by the unsilicided portion;

a gate overlying and insulated from the channel region, wherein the gate is coupled to the ground potential node;

a first ESD region beneath the silicided portion of the elongated drain region; and

a second ESD region beneath the unsilicided portion of the elongated drain region, the second ESD region being spaced from the first ESD region, wherein the first and second ESD regions are separate ESD-implant regions.

11. The device of claim 10, further comprising at least one bulk contact region in the vicinity of the ESD protection device.

12. The device of claim 10, wherein the elongated drain region is coupled to an external input/output node.

13. The device of claim 10, wherein the elongated drain region is coupled to a reference voltage potential.

14. The device of claim 10, wherein the source region and the elongated drain region comprise n+ regions and wherein the first ESD region and the second ESD region comprise p regions.

15. The device of claim 10, wherein the unsilicided portion of the elongated drain region extends to the channel region.

16. The device of claim 10, wherein the elongated drain region further includes a second silicided portion adjacent the channel region, the unsilicided portion of the elongated drain region extending to the second silicided portion.

17. The device of claim 10, wherein the second ESD region is spaced from the first ESD region by a region of semiconductor having a lower doping concentration than either the first ESD region or the second ESD region.

18. An ESD protection device comprising:

a source region;

a channel region adjacent the source region;

an elongated drain region spaced from the source region by the channel region, the elongated drain region including an unsilicided portion adjacent the channel region and a silicided portion spaced from the channel region by the unsilicided portion;

a contact overlying the silicided portion of the elongated drain region and electrically connected thereto;

a gate overlying and insulated from the channel region;

a first ESD region beneath the silicided portion of the elongated drain region, the first ESD region vertically underlying the contact; and

a second ESD region beneath the unsilicided portion of the elongated drain region, the second ESD region being spaced from the first ESD region, the second ESD region not vertically underlying the contact, wherein the first and second ESD regions are separate ESD-implant regions.

19. The device of claim 18, further comprising at least one bulk contact region in the vicinity of the ESD protection device.

20. The device of claim 18, wherein the gate and the source region are coupled to a ground potential.

21. The device of claim 20, wherein the elongated drain region is coupled to an external input/output node.

22. The device of claim 20, wherein the elongated drain region is coupled to a reference voltage potential.

23. The device of claim 18, wherein the source region and the elongated drain region comprise n+ regions and wherein the first ESD region and the second ESD region comprise p regions.

24. The device of claim 18, wherein the unsilicided portion of the elongated drain region extends to the channel region.

25. The device of claim 18, wherein the elongated drain region further includes a second silicided portion adjacent the channel region, the unsilicided portion of the elongated drain region extending to the second silicided portion.

26. The device of claim 18, wherein the first ESD region vertically underlies the contact such that a vertical line perpendicular with a plane of an upper surface of the elongated drain region that extends through a center point of the contact passes through the first ESD region.