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Implantable microelectronic device and method of manufacture

  • US 7,709,961 B2
  • Filed: 10/25/2007
  • Issued: 05/04/2010
  • Est. Priority Date: 11/02/2005
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a microelectronic device located on a silicon substrate, said microelectronic device having a conductive contact pad surrounded by electrically insulating material,at least one patterned first metal layer formed on said contact pad and extending beyond the edge of said contact pad,at least one patterned second metal layer formed over said first metal layer, said second metal layer having an exposed upper contact surface,an electrically insulating material layer hermetically surrounding said microelectronic device and said patterned layers, said electrically insulating material layer having an aperture which exposes said upper contact surface.

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