×

Back-gate voltage generator circuit, four-terminal back gate switching FET, and charge and discharge protection circuit using same

  • US 7,710,076 B2
  • Filed: 08/14/2007
  • Issued: 05/04/2010
  • Est. Priority Date: 09/19/2006
  • Status: Expired due to Fees
First Claim
Patent Images

1. A back-gate voltage generator circuit generating a back-gate voltage of a four-terminal back gate switching MOSFET for charge and discharge control, the back-gate voltage generator circuit comprising:

  • first and second n-type MOSFETs connected in series through a common source electrode,wherein a voltage at the common source electrode of the first and second n-type MOSFETS connected in series serves as the back-gate voltage of the four-terminal back gate switching MOSFET, and the back-gate voltage is used as a reference voltage for generating signals for controlling the first and second n-type MOSFETS, anda first inverter to which a control signal generated from one of detection signals of overcharge, overdischarge, discharge overcurrent, and charge overcurrent of a secondary battery is input, anda second inverter to which an output of the first inverter is input,wherein the output of the first inverter is input to a gate of the first n-type MOSFET,an output of the second inverter is input to a gate of the second n-type MOSFET, andthe back-gate voltage is used as a ground-side reference potential of each of the first inverter and the second inverter.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×