Back-gate voltage generator circuit, four-terminal back gate switching FET, and charge and discharge protection circuit using same
First Claim
1. A back-gate voltage generator circuit generating a back-gate voltage of a four-terminal back gate switching MOSFET for charge and discharge control, the back-gate voltage generator circuit comprising:
- first and second n-type MOSFETs connected in series through a common source electrode,wherein a voltage at the common source electrode of the first and second n-type MOSFETS connected in series serves as the back-gate voltage of the four-terminal back gate switching MOSFET, and the back-gate voltage is used as a reference voltage for generating signals for controlling the first and second n-type MOSFETS, anda first inverter to which a control signal generated from one of detection signals of overcharge, overdischarge, discharge overcurrent, and charge overcurrent of a secondary battery is input, anda second inverter to which an output of the first inverter is input,wherein the output of the first inverter is input to a gate of the first n-type MOSFET,an output of the second inverter is input to a gate of the second n-type MOSFET, andthe back-gate voltage is used as a ground-side reference potential of each of the first inverter and the second inverter.
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Abstract
A back-gate voltage generator circuit generating a back-gate voltage of a four-terminal back gate switching MOSFET for charge and discharge control is disclosed. The back-gate voltage generator circuit includes first and second n-type MOSFETs connected in series through a common source electrode. A voltage at the common source electrode of the first and second n-type MOSFETS connected in series serves as the back-gate voltage of the four-terminal back gate switching MOSFET, and the back-gate voltage is used as a reference voltage for generating signals for controlling the first and second n-type MOSFETS.
13 Citations
9 Claims
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1. A back-gate voltage generator circuit generating a back-gate voltage of a four-terminal back gate switching MOSFET for charge and discharge control, the back-gate voltage generator circuit comprising:
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first and second n-type MOSFETs connected in series through a common source electrode, wherein a voltage at the common source electrode of the first and second n-type MOSFETS connected in series serves as the back-gate voltage of the four-terminal back gate switching MOSFET, and the back-gate voltage is used as a reference voltage for generating signals for controlling the first and second n-type MOSFETS, and a first inverter to which a control signal generated from one of detection signals of overcharge, overdischarge, discharge overcurrent, and charge overcurrent of a secondary battery is input, and a second inverter to which an output of the first inverter is input, wherein the output of the first inverter is input to a gate of the first n-type MOSFET, an output of the second inverter is input to a gate of the second n-type MOSFET, and the back-gate voltage is used as a ground-side reference potential of each of the first inverter and the second inverter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification