Microelectromechanical device and method utilizing nanoparticles

• US 7,711,239 B2
• Filed: 04/19/2006
• Issued: 05/04/2010
• Est. Priority Date: 04/19/2006
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Kogut, Lior, Sasagawa, Teruo
• Primary Examiner(s): Le; Uyen-Chau N
• Assistant Examiner(s): Chu; Chris H
• Application Number:
  US11/407,730
• Publication Number:
  US 20070247401A1
• Time in Patent Office: 1,476 Days
• Field of Search: None
• US Class Current: 385/147
• CPC Class Codes: B81B 3/001 Structures having a reduced contact area, e.g. with bumps or with a textured surface
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

A microelectromechanical device (MEMS) utilizing nanoparticles for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator that includes a transparent electrode assembly having a first surface; and a movable reflective electrode assembly with a second surface facing the first surface. The movable reflective electrode assembly is movable between a relaxed and actuated (collapsed) position. Particles are deposited over the transparent electrode assembly or over a sacrificial layer separating the two electrodes. The particles lead to dimples in the reflective surface of the moving electrode. The particles can be removed with the sacrificial layer or remain in final devices.

Claims

1. A method of making an optical microelectromechanical system (MEMS) device, comprising:

forming a first electrode of the optical microelectromechanical system device;

providing a dielectric layer over the first electrode;

providing a sacrificial layer over the dielectric layer;

forming a second electrode over the sacrificial layer;

removing the sacrificial layer after forming the second electrode;

providing a plurality of pre-formed particles; and

depositing the plurality of pre-formed particles on the sacrificial layer after providing the plurality of pre-formed particles, after providing the sacrificial layer and before forming the second electrode, wherein the plurality of pre-formed particles have a diameter between about 10 Å and

about 500 Å

,

wherein forming the second electrode comprises transferring a texture from the pre-formed particles on the sacrificial layer into a surface of the second electrode deposited over the sacrificial layer.

2. The method of claim 1, wherein removing the sacrificial layer further comprises removing the plurality of pre-formed particles.

3. The method of claim 1, wherein the plurality of pre-formed particles are not removed during the step of removing the sacrificial layer.

4. The method of claim 1, wherein depositing the plurality of pre-formed particles comprises using a spin-on process.

5. The method of claim 1, wherein the second electrode comprises aluminum and wherein the plurality of pre-formed particles comprise Al₂O₃.

6. The method of claim 1, wherein the sacrificial layer comprises a material selected from the group consisting of molybdenum, silicon, and tungsten and wherein removing the sacrificial layer comprises using an etchant comprising fluorine.

7. The method of claim 6, wherein the plurality of pre-formed particles are etchable by the etchant.

8. The method of claim 6, wherein the plurality of pre-formed particles are not etchable by the etchant.

9. A method of making an optical microelectromechanical system (MEMS) device, comprising:

forming a first electrode of the optical microelectromechanical system device;

providing a dielectric layer over the first electrode;

providing a plurality of pre-formed particles;

depositing the plurality of pre-formed particles on the dielectric layer after providing the plurality of pre-formed particles, wherein the plurality of pre-formed particles have a diameter between about 10 Å and

about 500 Å

;

providing a sacrificial layer over the dielectric layer and the plurality of pre-formed particles such that a top surface of the sacrificial layer includes bumps at positions above the plurality of pre-formed particles;

forming a second electrode over the sacrificial layer; and

removing the sacrificial layer after forming the second electrode.

10. The method of claim 9, wherein removing the sacrificial layer further comprises removing the plurality of pre-formed particles.

11. The method of claim 9, wherein the plurality of pre-formed particles are not removed during the step of removing the sacrificial layer.

12. A method of making an optical microelectromechanical system (MEMS) device, comprising:

forming a first at least partially transparent electrode;

providing a dielectric layer over the first electrode;

providing a sacrificial layer over the dielectric layer;

forming a second reflective electrode over the sacrificial layer;

providing a liquid containing a plurality of pre-formed nanoparticles;

dispensing the liquid with the nanoparticles over the dielectric layer after providing the dielectric layer and before forming the second electrode; and

removing the liquid from over the dielectric layer to leave the nanoparticles over the dielectric layer without forming a continuous layer from the liquid;

wherein forming the second reflective electrode comprises transferring a texture formed by the nanoparticles left over the dielectric layer into a surface of the second reflective electrode formed over the sacrificial layer.

13. The method of claim 12, wherein dispensing the liquid comprises dispensing the liquid on the sacrificial layer.

14. The method of claim 12, wherein dispensing the liquid comprises dispensing the liquid on the dielectric layer.

15. The method of claim 12, further comprising removing the sacrificial layer.

16. The method of claim 12, wherein the plurality of nanoparticles have an average diameter between about 10 Å

and about 500 Å

.

17. An interferometric modulator made by the method of claim 12.