Detachable substrate or detachable structure and method for the production thereof

• US 7,713,369 B2
• Filed: 04/11/2002
• Issued: 05/11/2010
• Est. Priority Date: 04/13/2001
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Original Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Inventors: Zussy, Marc, Aspar, Bernard, Moriceau, Hubert, Rayssac, Olivier
• Primary Examiner(s): Osele; Mark A
• Application Number:
  US10/468,223
• Publication Number:
  US 20050029224A1
• Time in Patent Office: 2,952 Days
• Field of Search: 156/239, 156/344, 156/584, 156/249, 438/455, 438/458
• US Class Current: 156/249
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer
• CPC Class Codes: H01L 21/7813 leaving a reusable substrate, e.g. epitaxial lift off
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: Y10T 156/11 Methods of delaminating, per se; i.e. , separating at bonding face

Abstract

The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.

Claims

1. A method of preparing a thin layer carrying at least a part of a device, the method comprising:

providing a substrate having a surface;

providing a layer configured to form at least a part of the thin layer and having a first surface and a second surface opposite to the first surface;

applying a surface treatment to at least one of the surface of the substrate or the first surface of the layer;

forming a detachable bonded interface between the surface of the substrate and the first surface of the layer, wherein the surface treatment is applied so as to create within the bonded interface, a first interface region and a second interface region surrounding the first interface region, the first interface region having a first level of mechanical strength which is greater than zero, and the second interface region having a second level of mechanical strength significantly greater than the first level of mechanical strength; and

forming at least a part of a device on the second surface of the layer,

wherein the first and second levels of mechanical strength are sufficient to prevent the interface from detaching during this step, and

whereby the thin layer and the substrate may be subsequently detached at the bonded interface.

2. A method according to claim 1, wherein the substrate comprises a wafer having a wafer periphery surrounding a wafer core and wherein the second interface region includes the wafer periphery and the first interface region includes the wafer core.

3. A method according to claim 1, wherein forming a detachable bonded interface includes a step of preparing both the surface of the substrate and the first surface of the layer.

4. A method according to claim 1 further comprising a step of detaching the layer from the substrate at the detachable bonded interface subsequent to forming at least a part of the device.

5. A method according to claim 4, wherein the method further comprises, between the step of forming the detachable bonded interface and the step of detaching the layer from the substrate, a step of cutting at least the layer between the second interface region and the first interface region.

6. A method according to claim 4 wherein forming at least a part of a device comprises producing at least a part of a plurality of microelectronic, optical or mechanical components in a plurality of zones of the second surface of the layer that face the first interface region and followed by dividing the layer into parts each comprising one of the plurality of components, and wherein detaching the layer is carried out part by part.

7. A method according to claim 4, wherein the method further comprises between the step of forming the detachable bonded interface and detaching the layer, a bonding step during which the second surface of the layer is bonded to a second substrate.

8. A method according to claim 1, wherein the first interface region comprises a plurality of interface fragments surrounded by the second interface region, and wherein forming at least part of a device comprises producing at least a part of a plurality of microelectronic, optical or mechanical components in a plurality of zones each opposite to a respective interface fragment of the first interface region of low mechanical strength and surrounded by the second interface region of higher mechanical strength.

9. A method according to claim 1, wherein forming a detachable bonded interface comprises one of direct bonding or molecular adhesion bonding.

10. A method according to claim 9 wherein applying a surface treatment includes a treatment step of locally increasing the roughness of the at least one surface in a zone forming part of the first interface region after bonding.

11. A method according to claim 10, wherein the treatment step comprises localized acid etching of the at least one surface in the zone forming part of the first interface region.

12. A method according to claim 11, wherein the localized acid etching comprises etching with hydrofluoric acid, wherein a zone of the at least one surface forming part of the second interface region is protected from etching by a nitride layer, and wherein the method further comprises eliminating the nitride layer after etching.

13. A method according to claim 9, wherein applying a surface treatment comprises a step in which the at least one surface is roughened entirely and a step in which the roughness of at least a zone forming part of the first interface region is reduced to obtain greater bonding forces.

14. A method according to claim 13, wherein the roughness of the zone is reduced by one or more of chemical polishing, mechanical treatment, chemical-mechanical treatment, or dry etching.

15. A method according to claim 1, wherein forming a detachable bonded interface comprises adhesive bonding.

16. A method according to claim 15, wherein the adhesive bonding comprises bonding with an adhesive that is hardened by UV radiation.

17. A method according to claim 1, wherein providing a layer comprises providing a continuous layer.

18. A method according to claim 17, wherein providing a layer comprises providing a monocrystalline silicon layer.