Pressure sensor

• US 7,713,771 B2
• Filed: 09/01/2006
• Issued: 05/11/2010
• Est. Priority Date: 09/01/2006
• Status: Expired due to Fees

• Current Assignee: Grundfos A/S (Poul Due Jensens Fond)
• Original Assignee: Grundfos A/S (Poul Due Jensens Fond)
• Inventors: Pedersen, Heins K., Mehalso, Robert M., Dyrbye, Karsten, Eriksen, Gert Friis, Pond, Stephen F.
• Primary Examiner(s): Garber; Charles D
• Assistant Examiner(s): Abdelaziez; Yasser A
• Application Number:
  US11/469,511
• Publication Number:
  US 20080054383A1
• Time in Patent Office: 1,348 Days
• Field of Search: 438106-127, 438/53, 737/16
• US Class Current: 438/53
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure

Abstract

A differential pressure sensor includes a micro-electromechanical sensor die fabricated as a plurality of sensor die sites on a semiconductor wafer, and then singularized, the sensor die having a top face surface including die electrical output pads exposed to a first test fluid source and a bottom side surface exposed to a second test fluid source. The differential pressure further has a sensor die support member having a die support member fluid access port with a support member port perimeter; wherein one of the top face surface or the bottom side surface is sealed fully around the support member port perimeter by a wafer scale seal formed on the plurality of sensor die sites before die singulation. Wafer scale seals may be formed by a photofabrication process, screen printing, stamp printing, or pressure transfer printing. Some embodiments may include a photofabricated seal formed by a photosensitive polydimethylsiloxane material, by a filled photofabricated mold, and by photopatterned glass frit.

Claims

1. A method of producing a differential pressure sensor comprising:

fabricating a plurality of sensor die sites on a semiconductor wafer,

forming first and second wafer scale seals on each of the sensor die sites, the first and second wafer scale seal being formed on first and second surfaces of each of the sensor die sites,

providing each of the sensor die sites with die electrical output pads,

singularizing the plurality of sensor die sites to provide a plurality of singularized die sites, each singularized die site representing a sensor die comprising one of the sensor die sites with its respective first and second wafer scale seals, die electrical output pads, and first and second surfaces, and

providing a sensor die support member and a top cover to the sensor die, wherein the sensor die support member has a support member fluid access port with a support member port perimeter and the top cover has a top cover fluid access port having a top cover port perimeter and wherein the first and second wafer scale seals on the sensor die fully seal the first and second surfaces of the sensor die around the support member port perimeter and around the top cover port perimeter.

2. The method of claim 1, wherein the first wafer scale seal comprises a seal material and wherein forming the first wafer scale seal comprises applying the seal material with one of a photofabrication process, screen printing, stamp printing, or pressure transfer printing.

3. The method of claim 1, wherein the first wafer scale seal comprises a compressible material.

4. The method of claim 2, wherein forming the first wafer scale seal comprises applying the seal material with the photofabrication process and wherein the seal material comprises a photosensitive polydimethylsiloxane material.

5. The method of claim 2, wherein forming the first wafer scale seal comprises forming a photofabricated mold on each of the sensor die sites, applying the seal material with the photofabrication process to fill the mold, and removing the photofabricated mold, and wherein the seal material comprises an elastomeric material.

6. The method of claim 5, wherein the elastomeric material comprises polydimethylsiloxane or silicone rubber.

7. The method of claim 5, wherein forming the photofabricated mold comprises using a dry film photoresist.

8. The method of claim 1, wherein the first wafer scale seal comprises a seal material having an intermediate cure state and a final cure state, and wherein providing the sensor die support member comprises bringing the first wafer scale seal into contact with the die support member while the seal material is in the intermediate cure state and subsequently finally curing the seal material so as to bond to the die support member.

9. The method of claim 1, further comprising coating the first or second surface of each of the sensor die sites with an amorphous metal layer such that the first or second surface of the sensor die is coated with the amorpous metal layer in a sensing area exposed to a central portion of the support member port area not covered by the first or second wafer scale seal.

10. The method of claim 9, wherein the sensor die support member comprises a ceramic material, the first wafer scale seal comprises a low temperature glass frit material with a curing temperature of not more than 450°

C., and wherein providing the sensor die support member comprises bringing the first wafer scale seal into contact with the die support member and subsequently curing the glass flit so as to bond to the die support member.

11. The method of claim 1, wherein providing the die support member comprises mechanically compressing the first wafer scale seal against the die support member.

12. The method of claim 1, wherein the die support member comprises polyphenylene sulphide.

28. The method of claim 1 wherein the second wafer scale seal comprises a seal material and wherein forming the second wafer scale seal comprises applying the seal material with one of a photofabrication process, screen printing, stamp printing, or pressure transfer printing.

29. The method of claim 28, wherein the second wafer scale seal comprises a compressible material.

37. The method of claim 1, wherein the sensor die support member comprises a die support side, a support member outer side, a die support seal member holding feature on the support member outer side, and a die support seal member held in place by the die support seal member holding feature, wherein the die support seal member defines a die support seal interior opening which is aligned with the support member fluid access port, and the die support seal member is adapted to seal against the support member outer side and around the support member fluid access port when compressed.

38. The method of claim 37, wherein the a top cover for assembly to the sensor die is provided after the sensor die is supported on the sensor die support, wherein the top cover comprises a die interface side and a top cover outer side, and wherein the top cover has a top cover seal member holding feature located on the top cover outer side, the top cover has a top cover seal member held by the top cover seal member holding feature, the top cover seal member defines a top cover seal interior opening aligned with the top cover fluid access port, and the top cover seal member is adapted to seal against the top cover outer side and around the top cover fluid access port when compressed.

39. The method of claim 38, wherein the top cover, the die support member, and the sensor die form an assembly, and the method further comprising providing a rigid outer sensor case having a sensor cavity formed by a sensor cavity wall enclosure having an interior wall surface adapted to receive the assembly, and wherein the rigid outer sensor case has first and second test fluid access ports formed through the sensor cavity wall enclosure in fluid communication with the top cover fluid access port and the support member fluid access port, respectively, and wherein the sensor cavity is dimensioned so as to mechanically compress the top cover seal member and the die support seal member, and the first and second test fluid access ports define first and second openings in the interior wall surface that are positioned and dimensioned to lie within the top cover seal interior opening and the die support seal interior opening, respectively.

40. The method of claim 39, wherein the die support member and the top cover are formed in one piece.

41. The method of claim 38, wherein the first and second wafer scale seals are formed of first and second seal materials, respectively, and the forming of the first and second wafer scale seals comprises applying the first and second seal materials with one of a photofabrication process, screen printing, stamp printing, or pressure transfer printing.

42. The method of claim 37, further comprising providing a rigid outer sensor case having a sensor cavity formed by a sensor cavity wall enclosure, the sensor cavity wall enclosure having an interior wall surface adapted to receive the die support member and the sensor die, and the rigid outer sensor case having a first test fluid access port formed through the sensor cavity wall enclosure and having a first opening in the interior wall surface having a first access port inner perimeter, wherein the second wafer scale seal is adapted to seal the other of the first or second surface of the sensor die fully around the first access port inner perimeter;

and wherein the rigid outer sensor case has a second test fluid access port formed through the sensor cavity wall enclosure in fluid communication with the support member fluid access port, the sensor cavity is dimensioned so as to mechanically compress the die support seal member and the second wafer scale seal, and wherein the second test fluid access port defines a second test fluid access port opening in the interior wall surface that is positioned and dimensioned to lie within the die support seal interior opening.

46. The method according to claim 1, wherein the first and second wafer scale seals have sealing widths of 50 to 700 micrometers and thicknesses of 25 to 200 micrometers.

47. The method according to claim 1, wherein the first and second wafer scale seals have sealing widths of 50 to 200 micrometers and thicknesses of 25 to 200 micrometers.

13. A method of producing a differential pressure sensor comprising:

fabricating a plurality of sensor die sites on a semiconductor wafer,

forming a first wafer scale seal on each of the sensor die sites, the first wafer scale seal being formed on one of a first or second surface of each of the sensor die sites,

providing each of the sensor die sites with die electrical output pads,

singularizing the plurality of sensor die sites to provide a plurality of singularized die sites, each singularized die site representing a sensor die comprising one of the sensor die sites with its respective first wafer scale seal, die electrical output pads, and first and second surfaces,

providing a sensor die support member to the sensor die, wherein the sensor die support member has a support member fluid access having a support member port perimeter and wherein the first wafer scale seal on the sensor die fully seals the one of the first or second surface of the sensor die sites around the support member port perimeter, and

providing a top cover for the sensor die after providing the sensor die support member and applying an applied-in-place seal on the sensor die or top cover before providing the top cover to the sensor die, wherein the top cover has a top cover fluid access port which has a top cover port perimeter, and wherein the applied-in-place seal fully seals the other of the first or second surface of the sensor die sites around the top cover port perimeter.

14. The method of claim 13, wherein the applied-in-place seal comprises a compressible material.

15. The method of claim 14, wherein the applied-in-place seal is cured before providing the top cover to the sensor die, and wherein the applied-in-place seal is mechanically compressed after providing the top cover to the sensor die.

16. The method of claim 13, wherein the applied-in-place seal comprises a seal material having an intermediate cure state and a final cure state, and wherein providing the top cover to the sensor die comprises bringing the applied-in-place seal into contact with the top cover and sensor die while the seal material is in the intermediate cure state and subsequently finally curing the seal material so as to bond to the top cover and the sensor die.

17. The method of claim 13, further comprising coating the other of the first or second surface of each of the sensor die sites with an amorphous metal layer, such that the other of the first or second surface of the sensor die sites is coated with the amorpous metal layer in a sensing area exposed to a central portion of the top cover port area and is not covered by the apply-in-place seal.

18. The method of claim 13, further comprising providing an electrical connection wiring board supported by the die support member, wherein providing the electrical connection wiring board comprises uses of one of thermocompression bonding, reflow soldering or anisotropic conductive epoxy, wherein the electrical connection wiring board is electrically connected to the die electrical output pads.

19. The method of claim 18, wherein providing the electrical connection wiring board comprises electrically connecting the electrical connection wiring board to the die electrical output pads to form an attached die subassembly and then assembling the attached die subassembly to the die support member.

20. The method of claim 19, wherein the forming of the first wafer scale seal comprises forming the first wafer scale seal on the second surface of each of the sensor die sites, such that the wafer scale seal is formed on the second surface of the sensor die sites and wherein the forming of the applied-in-place seal comprises extending the applied-in-place seal to cover the die electrical output pads.

21. The method of claim 13, wherein the top cover comprises polyphenylene sulphide.

22. The method of claim 13, wherein the die support member and top cover are formed in one piece.

23. The method of claim 13, wherein the outermost area of overlap between the top cover and the die support member defines an outer case perimeter, the method further comprising forming an outer case seal along at least a portion of the outer case perimeter.

24. The method of claim 23, wherein the outer case seal is an applied-in-place seal formed on the top cover or the die support member prior to the providing of the top cover.

25. The method of claim 23, wherein the outer case seal is formed as an ultrasonic weld of top cover and die support material along at least a portion of the outer case perimeter.

26. The method of claim 23, wherein the top cover and the die support member are held in mechanical compression after the providing of the top cover, and wherein the outer case seal comprises a compressible gasket member interposed between the top cover and the die support member.

27. The method of claim 13, wherein applying the applied-in-place seal comprises application by one of screen printing, stamp printing, pressure transfer printing, dispensing through a needle having a seal-shaped hollow portion, or dispensing through a needle that is moved along a seal pattern pathway.

30. The method of claim 13, wherein the sensor die support member has a die support side and a support member outer side, the support member port perimeter is on the die support side, the top cover has a die interface side and a top cover outer side, the top cover port perimeter is on the die interface side, and wherein the sensor die support member comprises a die support seal member holding feature on the support member outer side and a die support seal member held in place by the die support seal member holding feature, and wherein the die support seal member defines a die support seal interior opening which is aligned with the support member fluid access port, and the die support seal member is adapted to seal against the support member outer side and around the support member fluid access port when compressed.

31. The method of claim 30, wherein the die support seal member comprises an O-ring.

32. The method of claim 30, wherein the top cover has a top cover seal member holding feature located at the top cover outer side, and the top cover has a top cover seal member held by the top cover seal member holding feature, and wherein the top cover seal member defines a top cover seal interior opening aligned with the top cover fluid access port, and the top cover seal member is adapted to seal against the top cover outer side and around the top cover fluid access port when compressed.

33. The method of claim 32, wherein the top cover seal member comprises an O-ring.

34. The method of claim 32, wherein the top cover, the die support member, and the sensor die form an assembly, the method further comprising providing a rigid outer sensor case having a sensor cavity formed by a sensor cavity wall enclosure having an interior wall surface adapted to receive the assembly, and wherein the rigid outer sensor case has first and second test fluid access ports formed through the sensor cavity wall enclosure in fluid communication with the top cover fluid access port and the support member fluid access port, respectively, and wherein the sensor cavity is dimensioned so as to mechanically compress the top cover seal member and the die support seal member, and wherein the first and second test fluid access ports define respective first and second openings in the interior wall surface, the first and second openings are positioned and dimensioned to lie within the top cover seal interior opening and the die support seal interior opening, respectively.

35. The method of claim 34, wherein the die support member and the top cover are formed in one piece.

36. The method of claim 30, wherein the first wafer scale seal comprises a seal material, and forming the first wafer scale seal comprises applying the seal material with one of a photofabrication process, screen printing, stamp printing, or pressure transfer printing.

48. The method according to claim 13, wherein the first wafer scale seal has a sealing width of 50 to 700 micrometers and a thickness of 25 to 200 micrometers.

49. The method according to claim 13, wherein the wafer scale seal has a sealing width of 50 to 200 micrometers and a thickness of 25 to 200 micrometers.

43. A method of producing a differential pressure sensor comprising:

fabricating a plurality of sensor die sites on a semiconductor wafer, the sensor die sites each having a first and second surface,

forming first and second wafer scale seals on each of the sensor die sites,

providing a first surface of each of the sensor die sites with die electrical output pads,

singularizing the plurality of sensor die sites to provide a plurality of singularized die sites, each singularized die site representing a sensor die comprising one of the sensor die sites with its respective first and second wafer scale seals, die electrical output pads, and first and second surfaces,

providing a rigid outer sensor case having a sensor cavity formed by a sensor cavity wall enclosure having an interior wall surface adapted to receive the sensor die, wherein the rigid outer sensor case has first and second test fluid access ports formed through the sensor cavity wall enclosure and having first and second openings in the interior wall surface, respectively, the first and second openings having first and second access port inner perimeters, respectively, and

wherein the first and second wafer scale seals are adapted to seal the first and second surfaces of the sensor die fully around the first and second access port inner perimeters, and wherein the sensor cavity is dimensioned so as to ensure contact between the first and second wafer scale seals and the first and second test fluid access ports, respectively.

44. The method of claim 43, wherein the sensor cavity is dimensioned so as to mechanically compress at least one of the first or second wafer scale seals.

45. The method of claim 43, wherein at least one of the first or second wafer scale seals is formed of a seal material cured after the die singularizing.

50. The method according to claim 43, wherein the first and second wafer scale seals have sealing widths of 50 to 700 micrometers and thicknesses of 25 to 200 micrometers.

51. The method according to claim 43, wherein the first and second wafer scale seals have sealing widths of 50 to 200 micrometers and thicknesses of 25 to 200 micrometers.