CMOS image sensor
First Claim
1. A method, comprising:
- forming an interlayer dielectric layer over a semiconductor substrate including a plurality of photo diodes;
forming a color filter layer corresponding to locations of the photo diodes over the interlayer dielectric layer;
forming a planarization layer over the color filter layer;
forming microlenses over the planarization layer;
depositing an insulating layer over the microlenses;
forming a trench having a concave lens shape in the insulating layer between the microlenses; and
forming a concave lens gap-filling insulating material inside the trench.
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Abstract
Embodiments relate to a CMOS image sensor and to a method for manufacturing a CMOS image sensor that may disperse stray beam between microlenses. According to embodiments, the method for manufacturing the CMOS image may include forming an interlayer dielectric layer on a semiconductor substrate including a plurality of photo diodes, forming a color filter layer corresponding to the photo diodes on the interlayer dielectric layer, forming a planarization layer on the color filter layer, forming microlenses on the planarization layer, after depositing an insulating layer over the microlenses, forming a trench in a concave lens shape in the insulating layer between the microlenses, and forming a concave lens gap-filling insulating materials inside the trench. In embodiments, concave lenses may be formed between microlenses in a CMOS image sensor and stray beams between the microlenses may be dispersed and recondensed into the microlenses.
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Citations
19 Claims
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1. A method, comprising:
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forming an interlayer dielectric layer over a semiconductor substrate including a plurality of photo diodes; forming a color filter layer corresponding to locations of the photo diodes over the interlayer dielectric layer; forming a planarization layer over the color filter layer; forming microlenses over the planarization layer; depositing an insulating layer over the microlenses; forming a trench having a concave lens shape in the insulating layer between the microlenses; and forming a concave lens gap-filling insulating material inside the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A device, comprising
an interlayer dielectric layer over a semiconductor substrate including a plurality of photo diodes; -
a color filter layer corresponding to locations of the photo diodes over the interlayer dielectric layer; microlenses over the color filter layer; an insulating layer over the microlenses; a trench having a concave lens shape in the insulating layer between the microlenses; and a concave lens gap-filling insulating material inside the trench. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification