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CMOS image sensor

  • US 7,713,775 B2
  • Filed: 12/26/2007
  • Issued: 05/11/2010
  • Est. Priority Date: 12/29/2006
  • Status: Expired due to Fees
First Claim
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1. A method, comprising:

  • forming an interlayer dielectric layer over a semiconductor substrate including a plurality of photo diodes;

    forming a color filter layer corresponding to locations of the photo diodes over the interlayer dielectric layer;

    forming a planarization layer over the color filter layer;

    forming microlenses over the planarization layer;

    depositing an insulating layer over the microlenses;

    forming a trench having a concave lens shape in the insulating layer between the microlenses; and

    forming a concave lens gap-filling insulating material inside the trench.

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