Periodic plasma annealing in an ALD-type process
First Claim
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1. An atomic layer deposition process for forming a thin film on a substrate in a reaction space, comprising in sequence:
- a) depositing a layer of a first thickness by;
contacting the substrate with a vapor phase pulse of a metal source chemical;
removing excess metal source chemical from the reaction space;
contacting the substrate with a vapor phase pulse of one or more plasma-excited reducing species during a first period of time; and
removing excess plasma-excited reducing species and reaction by-products from the reaction space;
b) repeating step a) for a first number of cycles until the layer of the first thickness is formed;
c) contacting the substrate with a second vapor phase pulse of one or more plasma-excited reducing species during a second period of time, the total second period being not less than about twice as long as the total first period of time that the substrate is contacted with a plasma-excited reducing species in step a); and
d) repeating steps a) through c) for a second number of cycles until a film of a second thickness is formed over the substrate.
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Abstract
Methods for performing periodic plasma annealing during atomic layer deposition are provided along with structures produced by such methods. The methods include contacting a substrate with a vapor-phase pulse of a metal source chemical and one or more plasma-excited reducing species for a period of time. Periodically, the substrate is contacted with a vapor phase pulse of one or more plasma-excited reducing species for a longer period of time. The steps are repeated until a metal thin film of a desired thickness is formed over the substrate.
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Citations
37 Claims
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1. An atomic layer deposition process for forming a thin film on a substrate in a reaction space, comprising in sequence:
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a) depositing a layer of a first thickness by; contacting the substrate with a vapor phase pulse of a metal source chemical; removing excess metal source chemical from the reaction space; contacting the substrate with a vapor phase pulse of one or more plasma-excited reducing species during a first period of time; and removing excess plasma-excited reducing species and reaction by-products from the reaction space; b) repeating step a) for a first number of cycles until the layer of the first thickness is formed; c) contacting the substrate with a second vapor phase pulse of one or more plasma-excited reducing species during a second period of time, the total second period being not less than about twice as long as the total first period of time that the substrate is contacted with a plasma-excited reducing species in step a); and d) repeating steps a) through c) for a second number of cycles until a film of a second thickness is formed over the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. An atomic layer deposition process for forming a thin film on a substrate in a reaction space, comprising in sequence:
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a) depositing a layer of a first thickness by; contacting the substrate with a vapor phase pulse of a metal source chemical; removing excess metal source chemical from the reaction space; contacting the substrate with a gas phase pulse of one or more reducing species during a first period of time; and removing excess reducing species and reaction by-products from the reaction space; b) repeating step a) for a first number of cycles until the layer of the first thickness is formed; c) contacting the substrate with a vapor phase pulse of one or more plasma-excited reducing species during a second period of time, the total second period being not less than twice as long as the total first period of time in which the substrate is contacted with the gas phase pulse of one or more reducing species in step a); and d) repeating steps a) through c) for a second number of cycles until a film of a second thickness is formed over the substrate. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. An atomic layer deposition process for forming a metal nitride film on a substrate in a reaction space, comprising the sequential steps of:
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a) contacting the substrate with a vapor-phase pulse of a metal source chemical; b) contacting the substrate with a vapor phase pulse of one of a reducing agent and a first nitrogen source chemical; c) contacting the substrate with a vapor phase pulse of the other of the reducing agent and the nitrogen source chemical; and d) repeating steps a) through c) for a first number of cycles until a first thickness of between a fraction of an angstrom and one hundred angstroms of material is deposited since either the ALD process began or an annealing step occurred; e) contacting the substrate with a vapor phase pulse of one or more plasma-excited reducing agent and a second nitrogen source chemical for a second period of time; and f) repeating steps a) through e) for a second number of cycles until a metal nitride thin film of a second thickness is formed over the substrate, wherein the total second period of time in step e) is at least about twice as long as the total first period of time the substrate is contacted with the reducing agent in step b) or c). - View Dependent Claims (34, 35, 36, 37)
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Specification