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Periodic plasma annealing in an ALD-type process

  • US 7,713,874 B2
  • Filed: 05/02/2007
  • Issued: 05/11/2010
  • Est. Priority Date: 05/02/2007
  • Status: Active Grant
First Claim
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1. An atomic layer deposition process for forming a thin film on a substrate in a reaction space, comprising in sequence:

  • a) depositing a layer of a first thickness by;

    contacting the substrate with a vapor phase pulse of a metal source chemical;

    removing excess metal source chemical from the reaction space;

    contacting the substrate with a vapor phase pulse of one or more plasma-excited reducing species during a first period of time; and

    removing excess plasma-excited reducing species and reaction by-products from the reaction space;

    b) repeating step a) for a first number of cycles until the layer of the first thickness is formed;

    c) contacting the substrate with a second vapor phase pulse of one or more plasma-excited reducing species during a second period of time, the total second period being not less than about twice as long as the total first period of time that the substrate is contacted with a plasma-excited reducing species in step a); and

    d) repeating steps a) through c) for a second number of cycles until a film of a second thickness is formed over the substrate.

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